AZ4620光刻胶掩膜的氮化硅图形化工艺

发布时间：2018-03-01 13:15

  本文关键词： 曝光剂量 掩膜 湿法刻蚀 刻蚀速率 喇曼位移　出处：《微纳电子技术》2017年06期 　论文类型：期刊论文

【摘要】：以薄膜体声波谐振器(FBAR)的背腔刻蚀为研究背景,研究了光刻工艺参数设置与光刻图形转移效果的关系。分析了紫外曝光剂量大小对光刻图形面积和边角曲率的影响,优化得到最佳工艺流程,以AZ4620光刻胶为掩膜实现了氮化硅的湿法刻蚀。实验结果表明,曝光剂量为60 mJ、显影时间60 s时,曝光图形化质量最佳;随着氮化硅刻蚀液温度的升高,湿法刻蚀速率不断增大,温度过高导致光刻胶被破坏而不能起到掩膜作用,60℃时刻蚀速率为109.5 nm/min,得到了边线规整、底部平整的微结构。刻蚀后表面分子喇曼位移为单晶硅的波峰(519.354 cm~(-1)),证实氮化硅被完全去除,为氮化硅作掩膜的单晶硅湿法刻蚀提供了一种有效途径。
[Abstract]:Based on the back cavity etching of thin film bulk acoustic resonator FBARs, the relationship between the setting of lithography process parameters and the effect of lithography pattern transfer is studied. The influence of UV exposure dose on the area and edge curvature of lithography pattern is analyzed. The optimum process was obtained by using AZ4620 photoresist as the mask to realize the wet etching of silicon nitride. The experimental results show that when the exposure dose is 60mJ and the development time is 60s, the exposure graphic quality is the best, and with the increase of the temperature of the silicon nitride etching solution, When the wet etching rate is increasing, the etching rate is 109.5 nm / min when the temperature is too high and the photoresist is destroyed and cannot play the role of mask at 60 鈩，

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