太赫兹波段基于HEMT人工微结构的制备与基础研究

发布时间：2018-03-02 11:28

本文选题：太赫兹　切入点：高电子迁移率晶体管　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：太赫兹(Terahertz,1THz=1012Hz)波通常指频率在0.1THz~10THz(波长为3mm~30μm)范围内的电磁辐射。太赫兹波在电磁波频谱中占有很特殊的位置,因而具有极重要的学术价值和独特优越的特性,太赫兹无线通信作为太赫兹最重要的应用方向之一,目前受到了世界各国的重视。而作为太赫兹通信系统中最为关键的核心技术之一,太赫兹波动态功能器件如太赫兹开关、调制器、滤波器等,如今成为太赫兹技术研究领域的重点。近年来,随着半导体材料与技术的发展,高电子迁移率晶体管(HEMT)展现出的卓越表现,为太赫兹波动态器件的实现提供了新的思路。HEMT是一种利用存在于调制参杂异质结中的二维电子气(2-DEG)来进行工作的新型场效应晶体管,它的出现为太赫兹快速响应动态器件提供了新的发展思路。第三代宽禁带半导体材料GaN不仅具有宽的^/隙(导致大功率输出),而且还具有热导率大、电子饱和速率高(导致了短的运输时间)、击穿场强大及热稳定性好等特点。因此在制备高速动态功能器件中,基于GaN材料的HEMT具有很大的优势。本论文主要的研究内容和所得成果如下:1、研究AlGaN/GaN HEMT器件制备的关键工艺对器件系能的影响,并在优化工艺参数的基础上对器件进行制备研究。简单介绍了光刻、ICP刻蚀隔离有源区工艺,其次详细研究了表面处理、退火条件以及金属组分对AlGaN/GaN HEMT源漏电极欧姆接触的影响,研究得出获得Ti/Al/Ni/Au欧姆接触电极的最佳条件。最终设计器件版图,结合工艺优化后参数对AlGaN/GaN HEMT器件进行了制备,测试得到性能良好的AlGaN/GaN HEMT。2、分析基于metamaterials太赫兹动态器件的设计方法,利用电磁仿真软件CST对两种metamaterials单元结构的电磁特性进行了分析与研究。3、将HEMT与metamaterials相结合,通过结构设计、模拟仿真、优化论证设计出基于HEMT的metamaterials太赫兹调制器单元结构。并将其运用微细加工的方法进行制备,测试得到该调制器对所设计频点附近的太赫兹波具有快速调制作用,证实了结构的准确性以及所采用的制备方法和工艺参数的可靠性。本论文中所涉及到的器件制备都是在中科院苏州纳米所独立完成。
[Abstract]:THz Terahertzt 1THzn 1012Hz) wave usually refers to electromagnetic radiation in the frequency range of 0.1THzn 10THz1 (wavelength 3mm-1 30 渭 m). Terahertzian wave occupies a very special position in the electromagnetic spectrum and therefore has extremely important academic value and unique superior characteristics. As one of the most important applications of terahertz, terahertz wireless communication has been paid more and more attention all over the world. As one of the most important core technologies in terahertz communication system, terahertz wave dynamic functional devices such as terahertz switch. Modulators, filters, and so on, have become the focus of research in terahertz technology. In recent years, with the development of semiconductor materials and technologies, HEMTs have shown remarkable performance. HEMT is a new type of field-effect transistor which uses 2-DEG (2-DEG), which exists in the modulated heterojunction, to work. The appearance of THz provides a new way of development for terahertz fast response dynamic devices. The third generation wide band gap semiconductor GaN not only has wide ^ / gap (leading to high power output, but also has high thermal conductivity). High electron saturation rate (resulting in short transport time, strong breakdown field and good thermal stability, etc.). HEMT based on GaN material has great advantages. The main contents and results of this thesis are as follows: 1. The influence of the key technology of AlGaN/GaN HEMT device fabrication on the device system energy is studied. On the basis of optimizing the process parameters, the fabrication of the device is studied. The process of lithographic etching and isolating active region is briefly introduced. Secondly, the effects of surface treatment, annealing conditions and metal composition on the ohmic contact of AlGaN/GaN HEMT source leakage electrode are studied in detail. The optimal conditions for obtaining Ti/Al/Ni/Au ohmic contact electrode are obtained. Finally, the layout of the device is designed, and the AlGaN/GaN HEMT device is fabricated with optimized process parameters. The good performance AlGaN/GaN HEMT.2is obtained. The design method based on metamaterials terahertz dynamic device is analyzed. The electromagnetic characteristics of two kinds of metamaterials cell structures are analyzed and studied by using electromagnetic simulation software CST. The HEMT and metamaterials are combined and simulated by structural design. The cell structure of metamaterials THz modulator based on HEMT is optimized and fabricated by micromachining. The results show that the modulator can modulate the terahertz wave near the designed frequency point quickly. The accuracy of the structure and the reliability of the preparation methods and process parameters were confirmed. The fabrication of the devices involved in this paper was carried out independently in Suzhou Nano-Institute of Chinese Academy of Sciences.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386;O441.4

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