基于双向可控硅的强鲁棒性静电防护器件

发布时间：2018-03-02 19:06

本文选题：静电放电(ESD)　切入点：双向可控硅(DDSCR)　出处：《浙江大学学报(工学版)》2017年08期 　论文类型：期刊论文

【摘要】：针对双向可控硅(DDSCR)器件的静电放电(ESD)鲁棒性,提出在N阱中加入N+注入区(DDSCR_N+)和在N阱中加入P+注入区(DDSCR_P+)2种改进型DDSCR结构,采用华润上华0.5μm Bipolar-CMOS-DMOS(BCD)工艺,分别制备传统DDSCR结构以及2种改进型DDSCR结构,通过半导体工艺及器件模拟工具(TCAD)进行仿真,分析不同结构的电流密度和ESD鲁棒性差异;流片后通过传输线脉冲测试(TLP)方法测试不同结构ESD防护器件特性.仿真和测试结果表明,改进型DDSCR_N+结构在具有和传统DDSCR器件的相同的触发和维持电压前提下,二次击穿电流比传统的DDSCR结构提高了160%,ESD鲁棒性更强,适用范围更广.
[Abstract]:Aiming at the robustness of electrostatic discharge (ESD) of bi-directional thyristor (DDSCR) devices, two kinds of improved DDSCR structures are proposed, which are to add N injected region DDSCRN into N well and to add P implanted region to N well. Two kinds of improved DDSCR structures are proposed, which are Bipolar-CMOS-DMOSBCDs (0.5 渭 m Bipolar-CMOS-DMOSCD-BCDs) process. The traditional DDSCR structure and two kinds of improved DDSCR structures are prepared respectively. The difference of current density and ESD robustness of different structures is analyzed by means of semiconductor process and device simulation tool. The characteristics of ESD protection devices with different structures are tested by the transmission line pulse test (TLP) method. The simulation and test results show that the modified DDSCR_N structure has the same trigger and maintenance voltage as the traditional DDSCR devices. Compared with the conventional DDSCR structure, the secondary breakdown current has better robustness and wider application range.
【作者单位】：中国科学技术大学信息科学技术学院;中国科学院自动化研究所国家专用集成电路设计工程技术研究中心;
【分类号】：TN34

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