8英寸薄层硅外延片的均匀性控制方法

发布时间：2018-03-04 08:04

本文选题：英寸硅外延片　切入点：薄层外延　出处：《半导体技术》2017年07期 　论文类型：期刊论文

【摘要】：8英寸(1英寸=2.54 cm)薄层硅外延片的不均匀性是制约晶圆芯片良率水平的瓶颈之一。研究了硅外延工艺过程中影响薄外延层厚度和电阻率均匀性的关键因素,在保证不均匀性小于3%的前提下,外延层厚度和电阻率形成中间低、边缘略高的"碗状"分布可有效提高晶圆的良率水平。通过调整生长温度和氢气体积流量可实现外延层厚度的"碗状"分布,但调整温区幅度不得超过滑移线的温度门槛值。通过提高边缘温度来提高边缘10 mm和6 mm的电阻率,同时提高生长速率以提高边缘3 mm的电阻率,获得外延层电阻率的"碗状"分布,8英寸薄层硅外延片的的边缘离散现象得到明显改善,产品良率也有由原来的94%提升至98.5%,进一步提升了8英寸薄层硅外延片产业化良率水平。
[Abstract]:The inhomogeneity of thin layer silicon wafer is one of the bottlenecks that restrict the yield of wafer chip. The key factors influencing the thickness of thin epitaxial layer and the uniformity of resistivity in silicon epitaxy process are studied. On the premise that the inhomogeneity is less than 3%, the thickness of the epitaxial layer and the formation of resistivity are low. The "bowl" distribution with slightly higher edge can effectively improve the yield level of the wafer. The "bowl" distribution of the epitaxial layer thickness can be realized by adjusting the growth temperature and the volume flow rate of hydrogen. But the amplitude of the temperature range should not exceed the temperature threshold of the slip line. The resistivity of 10 mm and 6 mm is increased by raising the temperature of the edge, and the resistivity of the edge 3 mm is increased by increasing the growth rate. The "bowl" distribution of the epitaxial layer resistivity and the edge dispersion of the 8-inch thin layer silicon epitaxial wafer have been obviously improved, and the yield of the product has also been raised from 94% to 98.5, which further improves the industrial yield of the 8-inch thin layer silicon epitaxial wafer.
【作者单位】：河北普兴电子科技股份有限公司河北省硅基外延材料工程技术研究中心;
【分类号】：TN304.054

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