基于绝缘体上应变硅纳米薄膜的应变调节研究

发布时间：2018-03-05 00:24

本文选题：应变　切入点：绝缘衬底上的硅　出处：《杭州电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：众所周知,采用传统的缩小器件尺寸的方法来提高晶体管性能越来越受到成本和技术的限制,从而限制了摩尔定律的进一步发展。绝缘衬底上应变硅(sSOI)将应变硅技术和SOI技术相结合,具有迁移率高,体硅工艺完全兼容,并具有体硅无法比拟的优点:消除寄生闩锁效应、集成密度高、速度快,短沟道效应小等优势,无疑是最有希望的技术之一。正是在上述背景下,本论文结合中国科学院上海微系统与信息技术研究所承担的国家科技重大专项“新型硅基应变材料”课题,以超薄sSOI纳米薄膜为基底材料,开展了悬浮桥型结构纳米薄膜应变调节研究,引入氢氟酸蒸汽腐蚀,通过设计特定桥型结构,基于弹性形变理论,得到了单轴应变4.65%的悬浮应变硅纳米线,并结合有限元软件Comsol Multiphysics模拟仿真悬浮桥型结构应变分布进行验证。本文主要的工作和研究内容如下:1、第一章介绍了应变硅技术和SOI技术、硅基材料应变引入方法和sSOI顶层应变硅的应变分布和类型转化的研究。2、第二章介绍了应变硅技术对载流子迁移率增强的理论分析,并对比了两种应变类型----单、双轴应变与迁移率的关系。3、第三章介绍了拉曼散射原理,推导拉曼硅峰位移量和应变度的关系,通过对SOI顶层本征硅(不含应变)进行特定的悬浮桥型加工,在不同结构尺寸和不同激光功率下,测量由热效应引入的虚应变,为后续应变测量实验提供校准。4、第四章介绍sSOI材料的制备方法,引入氢氟酸蒸汽腐蚀系统消除表面张力,设计特定桥型结构和基于弹性形变理论,得到了单轴应变4.65%的悬浮应变硅纳米线。5、第五章利用有限元软件Comsol Multiphysics模拟仿真悬浮桥型结构的应变分布和应变类型。根据sSOI纳米薄膜材料的性质,设置材料的弹性矩阵参数,得出不同结构尺寸下的应变分布。
[Abstract]:As we all know, the traditional method of reducing device size to improve the performance of transistors is more and more limited by cost and technology. Therefore, the further development of Moore's law is limited. The strained silicon on the insulating substrate combines the strained silicon technology with the SOI technology, which has the advantages of high mobility, complete compatibility of bulk silicon process and incomparable advantages of bulk silicon: elimination of parasitic latch effect, The advantages of high integration density, high speed and small short channel effect are undoubtedly one of the most promising technologies. In this thesis, the ultra-thin sSOI nanocrystalline thin films were used as substrates, combined with the project "New Silicon based strain Materials", which was undertaken by the Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences. The strain regulation of suspension bridge structure nanocrystalline film was studied. Hydrofluoric acid vapor corrosion was introduced. Based on elastic deformation theory, suspension strain silicon nanowires with uniaxial strain 4.65% were obtained by designing a special bridge structure. The strain distribution of suspension bridge structure is simulated by finite element software Comsol Multiphysics. The main work and research contents of this paper are as follows: 1. In the first chapter, strain silicon technology and SOI technology are introduced. The strain introduction method of silicon-based materials and the study of strain distribution and type transformation of strain silicon on top of sSOI. In the second chapter, the theoretical analysis of carrier mobility enhancement by strain silicon technique is introduced, and two strain types-single strain are compared. The relationship between biaxial strain and mobility. In chapter 3, the principle of Raman scattering is introduced, and the relationship between the displacement of Raman silicon peak and strain degree is deduced. Under different structure and different laser power, the virtual strain induced by thermal effect was measured. The preparation method of sSOI material was introduced in Chapter 4, 4th for the subsequent strain measurement experiment, and the surface tension was eliminated by introducing hydrofluoric acid vapor corrosion system. Design of specific bridge structures and based on elastic deformation theory, The suspension strain silicon nanowires of uniaxial strain 4.65%. 5. 5th. The strain distribution and strain type of suspension bridge structure are simulated by finite element software Comsol Multiphysics. According to the properties of sSOI nanofilm material, the elastic matrix parameters of the material are set up. The strain distribution under different structure sizes is obtained.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN32

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