功率MOSFET的开关动态过程建模和优化控制方法研究

发布时间：2018-03-05 11:15

本文选题：MOSFET　切入点：开关过程　出处：《吉林大学》2016年硕士论文　论文类型：学位论文

【摘要】：在电力变频器和开关电源的设计中,在高性能固态开关装置的设计和实现中,MOSFET和IGBT的开关性能至关重要,要想获得最优化的开关性能,需要对各个方面的所有细节进行细致的分析和考量。尤其当开关速度正变得越来越快的时候,分散于固态器件各PN结及耗尽层之间的寄生电容,电阻PCB电路板中的寄生电感都会在开关的瞬变过程中起重要作用,改变电路响应模式,使得开关曲线性能劣化,驱动电压和电流震荡,器件误导通或误关断等。在本篇论文中,我将详细研究MOSFET的开关暂态过程,在第一二章中对器件内部分布于各结之间的寄生电容电阻,及PCB线路的寄生电感等分布参数进行建模。在第三章中对MOSFET进行开关暂态过程的电路建模和Matlab仿真计算,在第四章中设计实验电路进行验证,分析和总结。在本文中,影响MOSFET的开关动态过程的各重要因素被一一逐个分析,主要包括栅源极寄生电容,栅漏极寄生电容,米勒平台的负反馈效应,驱动电路的寄生电感及驱动电路的电压电流和拓扑结构等。各个因素的作用通过仿真和实验两方面来进行验证,最后在第五章中总结出要获得高性能MOSFET和IGBT开关暂态过程所需要考虑的问题,及驱动电路设计的应该注意的事项和原则。
[Abstract]:In the design of power converter and switching power supply, in the design and implementation of high performance solid-state switching device, the switching performance of MOSFET and IGBT is very important. All the details need to be carefully analyzed and considered. Especially as the switching speed becomes faster and faster, parasitic capacitors scattered between the PN junctions and depletion layers of solid-state devices. Parasitic inductance in resistance PCB circuit board will play an important role in the transient process of switch, changing the circuit response mode, making the performance of the switch curve worse, driving voltage and current oscillation, device misleading or switching off, etc. In this paper, I will study the switching transient process of MOSFET in detail. In Chapter 12th, I will study the parasitic capacitance resistors that are distributed between the various junctions in the device. In chapter 3, the circuit modeling and Matlab simulation of switching transient process of MOSFET are carried out. In Chapter 4th, the experimental circuit is designed to verify, analyze and summarize. The important factors that affect the switching dynamic process of MOSFET are analyzed one by one, mainly including the parasitic capacitance of gate source, the parasitic capacitance of gate drain, the negative feedback effect of Hans Muller platform. The parasitic inductance of driving circuit, voltage, current and topology of driving circuit, etc. The function of each factor is verified by simulation and experiment. Finally, in Chapter 5th, the problems to be considered in the transient process of MOSFET and IGBT switches with high performance are summarized, as well as the matters and principles that should be paid attention to in the design of drive circuits.
【学位授予单位】：吉林大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN386

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