高光电探测效率CMOS单光子雪崩二极管器件

发布时间：2018-03-05 23:21

本文选题：单光子雪崩二极管　切入点：标准.μm　出处：《光子学报》2017年08期 　论文类型：期刊论文

【摘要】：基于0.18μm CMOS工艺技术,制作了单光子雪崩二极管,可对650~950nm波段的微弱光进行有效探测.该器件采用P~+/N阱结构,P~+层深度较深,以提高对长光波的光子探测效率与响应度;采用低掺杂深N阱增大耗尽层厚度,可以提高探测灵敏度;深N阱与衬底形成的PN结可有效隔离衬底,降低衬底噪声;采用P阱保护环结构以预防过早边缘击穿现象.通过理论分析确定器件的基本结构参数及工艺参数,并对器件性能进行优化设计.实验结果表明,单光子雪崩二极管的窗口直径为10μm,器件的反向击穿电压为18.4V左右.用光强为0.001 W/cm~2的光照射,650nm处达到0.495A/W的响应度峰值;在2V的过偏压下,650~950nm波段范围内光子探测效率均高于30%,随着反向偏压的适当增大,探测效率有所提升.
[Abstract]:Based on the 0.18 渭 m CMOS technology, a single photon avalanche diode is fabricated, which can effectively detect the weak light at 650 ~ 950nm. The P- / N well structure is used in this device to improve the photon detection efficiency and responsivity. The detection sensitivity can be improved by increasing the thickness of depleted layer with low doped deep N well, and the PN junction formed between deep N well and substrate can effectively isolate the substrate and reduce the substrate noise. The P well protection ring structure is adopted to prevent premature edge breakdown. The basic structure parameters and process parameters of the device are determined by theoretical analysis, and the performance of the device is optimized. The experimental results show that, The window diameter of single photon avalanche diode is 10 渭 m, the reverse breakdown voltage of the device is about 18.4 V, and the responsivity of 0.495AW / W is reached at 650 nm when the light intensity is 0.001 W / cm ~ (2). The photon detection efficiency is higher than 30 in the range of 650 ~ 950nm at 2V overbias, and the detection efficiency is improved with the appropriate increase of the reverse bias voltage.
【作者单位】：重庆邮电大学光电工程学院/国际半导体学院;中科院微电子所十室;
【基金】：国家自然科学基金(No.61404019)资助~~
【分类号】：TN312.7

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