基于MEMS工艺太赫兹倍频器研究

发布时间：2018-03-06 06:19

本文选题：太赫兹　切入点：二倍频　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：近年来,太赫兹技术的高速发展带来了太赫兹产业的繁荣,其中因为太赫兹倍频器是太赫兹频率源获得的一个最重要途径,所以,太赫兹倍频器的研究对太赫兹技术的发展具有十分重要的意义。本文介绍了太赫兹波的特点、倍频器的国内外发展动态及倍频器的基本理论和分析方法;介绍了一种新型的加工工艺——MEMS工艺,该工艺的精度优于传统工艺,在实现高频器件上具有独特的优势。本文从倍频器的工作原理出发,采用ADS和HFSS仿真软件,分别仿真设计了K波段二倍频器、W波段二倍频器和290GHz的二倍频器。本文采用ATF36163晶体管对K波段二倍频器进行了设计,其结构由匹配电路、直流偏置与滤波电路组成。通过ADS仿真,得到的该倍频器二次谐波的输出功率为3.15dBm;采用传统的加工工艺对其进行了加工,通过实测,其二次谐波的输出功率达到了1.06dBm。本文采用肖特基二极管对W波段二倍频器进行了设计,该倍频器的结构主要由波导腔体和石英基片屏蔽微带线组成。同时,波导微带探针、偏置电路、滤波器、匹配电路分别安置在该微带线相应位置。用ADS和HFSS仿真软件对该倍频器进行联合仿真,得到的二次谐波输出功率为1.402dBm。在W波段倍频器设计的基础上,本文设计了290GHz太赫兹频段二倍频器,其结构与W波段二倍频器相似。采用ADS和HFSS对其进行了联合仿真,该倍频器的二次谐波输出功率达到了7.889dBm。本文通过对不同频段倍频器的仿真设计或加工测试,验证了本文倍频器研究方案的合理性,理论分析的正确性。
[Abstract]:In recent years, the rapid development of terahertz technology has brought about the prosperity of terahertz industry, because terahertz frequency multiplier is one of the most important ways to obtain terahertz frequency source, so, The research of terahertz frequency multiplier is of great significance to the development of terahertz technology. This paper introduces the characteristics of terahertz wave, the domestic and international development of frequency multiplier, and the basic theory and analysis method of frequency multiplier. In this paper, a new fabrication process, MEMS process, is introduced. The precision of this process is superior to that of the traditional process, and it has unique advantages in the realization of high frequency devices. Based on the working principle of frequency multiplier, ADS and HFSS simulation software are used in this paper. The K-band doubler and 290GHz double-multiplier are simulated and designed respectively. In this paper, the ATF36163 transistor is used to design the K-band doubler, the structure of which is matched by the matching circuit. Through ADS simulation, the output power of the second harmonic is 3.15dBm.The traditional processing technology is used to process the frequency multiplier. The output power of the second harmonic is up to 1.06dBm.The W-band doubler is designed by Schottky diode. The structure of the frequency multiplier is mainly composed of the waveguide cavity and the quartz substrate shielded microstrip line. At the same time, the waveguide microstrip probe, The bias circuit, filter and matching circuit are arranged in the corresponding position of the microstrip line respectively. The frequency multiplier is simulated by ADS and HFSS software. The output power of the second harmonic is 1.402 dBm. on the basis of the design of the W-band frequency multiplier, the second harmonic output power is 1.402 dBm. In this paper, a 290GHz terahertz doubler is designed, the structure of which is similar to that of W-band doubler. The simulation is carried out by ADS and HFSS. The second harmonic output power of the multiplier is 7.889 dBm.Through the simulation design or machining test of the frequency multiplier in different frequency bands, the rationality of the research scheme and the correctness of the theoretical analysis are verified.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN771

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