光注入半导体激光器产生单边带效应的研究

发布时间：2018-03-09 19:30

本文选题：激光器　切入点：半导体激光器　出处：《光学学报》2016年02期 　论文类型：期刊论文

【摘要】：在光注入半导体激光器中,为了更好地利用单周期振荡的单边带效应产生光载无线通信(Ro F)系统所需的单边带光,通过数值模拟的方法研究产生单边带效应的注入条件和影响因素。通过在不同注入强度和频率失谐下仿真光注入半导体激光器的速率方程,找到了产生单边带效应的条件范围。选取弱注入与强注入两种特定情况分别研究各参数对产生单边带效应的影响。结果发现,无论是弱注入还是强注入时,单边带效应都随偏置电流和线宽增强因子的减小而更加明显。弱注入时单边带效应随频率失谐的增大而变好,而强注入时需减小频率失谐才能得到较好的单边带效应。此外,强注入时单边带效应还会随着腔衰减率的增大而增强。因此,要想获得好的单边带光,需选取合适的激光器类型与外部注入参数。
[Abstract]:In order to make better use of the single sideband effect of single period oscillation in optical injection semiconductor laser, the single sideband light needed for the optical wireless communication system Ro F) is generated. The injection conditions and influencing factors of single sideband effect are studied by numerical simulation. The rate equation of optical injection into semiconductor laser is simulated under different injection intensity and frequency detuning. The condition range of producing single sideband effect is found. The influence of each parameter on the generation of single sideband effect is studied in two special cases, weak injection and strong injection. The results show that, whether weak injection or strong injection, The single sideband effect is more obvious with the decrease of bias current and linewidth enhancement factor, and the single sideband effect becomes better with the increase of frequency detuning in weak injection, but it is necessary to reduce frequency detuning in strong injection to obtain better SSB effect. The single sideband effect will increase with the increase of cavity attenuation rate. Therefore, in order to obtain good single sideband light, it is necessary to select the appropriate laser type and external injection parameters.
【作者单位】：上海大学特种光纤与光接入网省部共建重点实验室;上海大学通信与信息工程学院;
【基金】：上海市浦江人才计划(14PJD017) 上海市重点学科(S30108)
【分类号】：TN248.4

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