电磁炉用NPT型IGBT的研究

发布时间：2018-03-10 02:29

本文选题：绝缘栅双极型晶体管　切入点：NPT型　出处：《东南大学》2015年硕士论文　论文类型：学位论文

【摘要】：绝缘栅双极型晶体管(IGBT)以其高耐压、低功率损耗、导通电阻小、大电流以及易于控制和驱动等优点,被广泛应用于电力电子领域,是如今最重要的新型功率半导体器件之一。NPT型IGBT作为IGBT器件的杰出代表,具有高可靠性以及正温度系数,正成为IGBT的发展热点。以及相比于国内尚不成熟的FS型IGBT生产技术,NPT型器件的工艺技术相对容易。因此,研究和优化NPT型IGBT有极大的现实意义。本文分析了NPT型IGBT的基本工作原理,阐述了器件阈值电压、导通电流、通态压降、导通电阻、击穿电压以及关断时间的基本分析表达式,揭示了这些电学特性参数与器件元胞尺寸和掺杂浓度分布的关系。同时,本文旨在设计出一款具有较小栅极寄生电容的NPT型IGBT器件,使其能够替代国外的同类产品。因此,在普通平面栅器件的基础上,本文采用分栅方案来设计NPT型IGBTo根据理论分析,利用仿真软件TSUPREM4、MEDICI分别对分栅NPT型IGBT的工艺流程和电学特性进行了仿真研究。仿真内容包括针对该分栅结构的栅长、分栅距离、背面离子注入、JFET调整注入以及如何抑制寄生晶闸管效应的研究,得出了最佳参数的范围,为具体的器件设计提供依据。最后,在理论分析和仿真结果的基础上,依据设计指标,完成了25A/1200V分栅NPT型IGBT器件的设计,包括N-基区浓度和厚度、P阱结深、栅长、分栅距离、N+发射区横向长度和浓度、背面离子注入剂量以及终端结构的确定和工艺流程的设计。并且给出了芯片面积和版图的设计方案,利用CADENCE软件给出了具体的版图设计。最终的仿真结果表明,该器件耐压为超过1200V,闽值电压为3.1V,等效输入电容Cies、等效输出电容Coes和转移电容Cres分别为1222pF、132pF、22pF。与仙童公司的产品FGA25N120AND相比寄生电容明显下降。
[Abstract]:IGBT (Insulated Gate Bipolar Transistor) is widely used in the field of power electronics due to its advantages of high voltage resistance, low power loss, small on-resistance, high current and easy control and drive. NPT type IGBT is one of the most important new power semiconductor devices. As an outstanding representative of IGBT devices, it has high reliability and positive temperature coefficient. It is becoming the hot spot of IGBT development, and compared with the immature FS type IGBT production technology, the process technology of NPT type device is relatively easy. It is of great practical significance to study and optimize NPT type IGBT. In this paper, the basic working principle of NPT type IGBT is analyzed, and the basic analytical expressions of threshold voltage, on-current, on-state voltage drop, on-resistance, breakdown voltage and turn-off time are described. The relationship between these electrical characteristic parameters and cell size and dopant concentration distribution is revealed. At the same time, a NPT type IGBT device with small gate parasitic capacitance is designed to replace the similar products from abroad. On the basis of common planar gate devices, this paper designs NPT type IGBTo based on theoretical analysis. Simulation software TSUPREM4 / Medici is used to simulate the process flow and electrical characteristics of NPT type IGBT. In this paper, the optimal parameters range of JFET and how to suppress the parasitic thyristor effect are obtained. Finally, on the basis of theoretical analysis and simulation results, the optimal parameters are obtained. The design of 25A / 1200V gate NPT IGBT device has been completed, including the concentration and thickness of N base region, the depth of P well junction, the gate length, the transverse length and concentration of N emission region. The design scheme of chip area and layout is given, and the specific layout design is given by using CADENCE software. The final simulation results show that, The device has a withstand voltage of more than 1200 V, a threshold voltage of 3.1 V, an equivalent input capacitor Cies, an equivalent output capacitance of Coes and a transfer capacitance of Cres of 1222 pFU 132pFN 22pF, respectively. The parasitic capacitance of the device is obviously decreased compared with Xiantong's product FGA25N120AND.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8

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