基于高速二维硒化钼异质结光电探测器的研究

发布时间：2018-03-10 10:26

  本文选题：硒化钼　切入点：纳米片　出处：《合肥工业大学》2017年硕士论文　论文类型：学位论文

【摘要】：基于二维过渡金属硫属化合物(TMDs)材料的制备及电子结构和光学特性的研究推动了二维光电探测器的研究,光电转换的研究进展更进一步地实现了超敏感、宽光谱响应光电探测器的构建,却面临增大受光面积,提高响应速度等主要挑战。本文选取二维(2D) TMDs半导体系列材料中硒化钼(MoSe_2)作为研究对象,通过控制材料合成、器件优化等实现了高速、低价值二维MoSe_2异质结光电近红外探测器的构建,主要的研究成果如下:(1)基于溶液法合成的二维MoSe_2纳米片(NSs),利用相互交叠的纳米片能够调整能带结构,采用简单滴涂或旋涂方法设计了新型MoSe_2/Si范德瓦尔斯异质结(vdWH)光电探测器(PDs)。研究表明,在零偏压下,器件具有优异的可见光-近红外光电响应特性,响应速度达～30ns,预测出的3dB带宽高达32 MHz,探测率达1.2×1012 Jones,噪声等效电流接近于0.1 pA·Hz-1/2。。(2)首次利用脉冲激光沉积方法(PLD)在Si衬底上原位沉积大面积高晶体质量二维MoSe_2薄膜,选取石墨烯做为上电极构建了 n-nSi/MoSe_2垂直异质结(vH)。这种原位的制备方法实现了薄膜的垂直生长同时还减少了界面态的影响,使得器件具有超快的响应速度(≈71ns),快于当前报道的二维TMD光电探测器响应速度。此外,该探测器能够实现从400 nm-1000 nm的宽光谱探测,并且有着高达6.1×1012 Jones的探测率和超过132 dB的线性动态范围。以上研究表明,新型2D-3D异质结的构建方法为实现高速、大面积、低价值光电探测器的制备提供了新的途径。
[Abstract]:The preparation, electronic structure and optical properties of two-dimensional transition metal compounds (TMDs) have promoted the research of two-dimensional photodetectors. The research progress of photoelectric conversion has further achieved hypersensitivity. The construction of wide spectral response photodetectors is faced with major challenges such as increasing the area of light receiving and improving the response speed. In this paper, molybdenum molybdenum selenide (MoS) 2) is selected as the research object, and the synthesis of the materials is controlled by controlling the synthesis of the materials. High speed, low value two-dimensional MoSe_2 heterojunction photovoltaic near infrared detectors have been constructed by device optimization. The main research results are as follows: 1) Two-dimensional MoSe_2 nanoliths synthesized by solution method can adjust the energy band structure by using overlapping nanocrystals. A novel MoSe_2/Si van der Waals heterojunction photodetector has been designed by using simple drop coating or spin-coating method. It is shown that the device has excellent photo-optical response characteristics under zero bias voltage. The response speed is up to 30 ns, the predicted 3dB bandwidth is as high as 32 MHz, the detectivity is 1.2 脳 1012 Jones, the noise equivalent current is close to 0.1 Pa 路Hz-1 / 2.2.2.) for the first time, a large area of high crystal quality two-dimensional MoSe_2 thin films are deposited on Si substrates by pulsed laser deposition method. Using graphene as the upper electrode, n-nSi / MoSe2 vertical heterojunction (VH) was constructed. The in situ preparation method realized the vertical growth of the films and reduced the influence of the interfacial states. The device has an ultra-fast response speed (鈮，

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