InGaAs纳电子学的进展

发布时间：2018-03-10 18:56

本文选题：纳电子学　切入点：InGaAs　出处：《微纳电子技术》2016年04期 　论文类型：期刊论文

【摘要】：InGaAs HEMT器件和纳米加工技术的结合推动了InGaAs纳电子学的发展,在太赫兹和后CMOS逻辑电路两大领域产生重要影响。综述了InGaAs纳电子学近10年在两大领域的发展路径和最新进展。在太赫兹领域,InGaAs纳电子学以InGaAs HEMT发展为主,沿着提高沟道In组分、缩小T型栅长、减少势垒层厚度和寄生电阻的技术路线发展。InGaAs太赫兹单片集成电路(TMIC)的工作频率达到1 THz,成为目前工作频率最高的晶体管。在后CMOS逻辑电路领域,InGaAs纳电子学以InGaAs MOSFET发展为主,沿着提高复合量子阱沟道中的In组分、缩小平面器件结构中的栅长、缩小立体器件结构中的鳍宽、减少埋栅结构中复合高k介质栅厚度、减少寄生电阻和在大尺寸Si晶圆上与Ge MOSFET共集成的技术路线发展。鳍宽为30 nm的InGaAs FinFET的亚阈值斜率(SS)为82 mV/dec,漏感生势垒降低(DIBL)为10 mV/V,最大跨导(g_(m,max))为1.8 mS/μm,导通电流(I_(ON))为0.41 mA/μm,关断电流(I_(OFF))为0.1μA/μm,其性能优于同尺寸的Si FinFET,具有成为后CMOS的7 nm节点后替代NMOSFET器件的潜力。
[Abstract]:The combination of InGaAs HEMT devices and nanofabrication technology promotes the development of InGaAs nanoelectronics. This paper reviews the development path and the latest progress of InGaAs nanoelectronics in the past 10 years. In the terahertz field, the development of InGaAs HEMT is the main development of InGaAs nanoelectronics. Along with increasing channel in composition, reducing T gate length, The technical route of reducing barrier layer thickness and parasitic resistance. The operating frequency of InGaAs terahertz monolithic integrated circuit (THz) reaches 1 THZ, which is the highest operating frequency transistor at present. In the field of post CMOS logic circuits, the development of InGaAs MOSFET is the main part of InGaAs nanoelectronics. Along with the increase of in component in the channel of composite quantum well, the gate length in planar device structure is reduced, the fin width in three-dimensional device structure is reduced, and the thickness of composite high k dielectric gate in buried gate structure is reduced. Technical development of reducing parasitic resistance and co-integration with GE MOSFET on a large Si wafer. For InGaAs FinFET with fin width of 30 nm, the sub-threshold slope is 82 MV / r / decode, the leakage induced barrier reduction is 10 MV / V, the maximum transconductance is 1.8 mS/ 渭 m, and the conduction current is 1.8 mS/ / 渭 m. Its performance is better than that of Si FinFETs of the same size, and has the potential to replace NMOSFET devices after becoming 7nm nodes of CMOS. The results show that: (1) the number of mA/ / 渭 m is 0.41 mA/ / 渭 m, and the turn-off current is 0. 1 渭 A / 渭 m, which is superior to that of Si FinFETs of the same size.
【作者单位】：中国电子科技集团公司;专用集成电路重点实验室;
【分类号】：TN386

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