基于高压大电流模块应用的3300V软穿通快速IGBT的设计

发布时间：2018-03-11 05:08

本文选题：高压大电流　切入点：软穿通型绝缘栅双极型晶体管　出处：《固体电子学研究与进展》2017年01期 　论文类型：期刊论文

【摘要】：设计了3 300V/50A的软穿通型IGBT芯片(SPT IGBT),利用数值仿真软件MEDICI对其各项特性进行了仿真研究,包括静态特性、开关特性、动态雪崩特性、短路特性、电容特性和闩锁特性,在满足设计需求的同时重点进行动态失效特性仿真,验证了该器件的可靠性。仿真结果显示,器件的额定工作电流为50A、正向阻断电压为4 178.8V、阈值电压VTH为7.8V、导通压降为2.67V、短路电流为857A、工作电流为100A时的雪崩耐量为1.755J。利用局域载流子寿命控制的方法对器件进行优化后,器件的正向阻断电压仍为4 178.8V,导通压降为4.13V,没有明显的改变,关断时间由6 725.75ns降低到了1 006.49ns,关断速度提高了568%,大大提高了器件的性能,降低了损耗。
[Abstract]:In this paper, a soft through-through IGBT chip of 3300V / 50A is designed, and its characteristics are simulated and studied by numerical simulation software MEDICI, including static characteristic, switching characteristic, dynamic avalanche characteristic, short-circuit characteristic, capacitive characteristic and latch characteristic. At the same time, the dynamic failure characteristic simulation is carried out to verify the reliability of the device. The simulation results show that, The rated operating current is 50A, the forward blocking voltage is 4178.8V, the threshold voltage VTH is 7.8 V, the on-voltage drop is 2.67V, the short-circuit current is 857A, and the avalanche tolerance is 1.755J. the device is optimized by using the method of local carrier lifetime control. The forward blocking voltage of the device is still 4 178.8 V, the on-voltage drop is 4.13 V, the turn-off time is reduced from 6 725.75 ns to 1 006.49 ns, the turn-off speed is increased by 568%, the performance of the device is greatly improved and the loss is reduced.
【作者单位】：浙江大学;国家电网智能电网研究院电工新材料与微电子研究所;
【基金】：国网科技项目(SGRI-WD-71-14-005) 国家高科技发展研究计划(863计划)资助项目(No.2014AA052401)
【分类号】：TN322.8

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