PECVD氮化硅薄膜制备工艺及性能测试研究

发布时间：2018-03-11 10:36

本文选题：氮化硅薄膜　切入点：等离子体增强型化学气相沉积　出处：《电子科技大学》2015年硕士论文　论文类型：学位论文

【摘要】：氮化硅薄膜具有优良的光电性能和机械性能,在集成电路、微机械电子、太阳能电池以及显示器件领域都有着广泛的应用。等离子体增强化学气相沉积(PECVD)因其沉积效率高、薄膜均匀性好且可灵活操作的优势成为制备氮化硅薄膜的主要方法之一。但是,PECVD制备的氮化硅薄膜都具有一定的应力,较大的应力会导致器件性能的下降。同时在单片集成非制冷红外探测器等MEMS器件中,氮化硅薄膜分别作为结构支撑层、电学绝缘层以及敏感材料钝化层。这不仅需要薄膜具有较低的应力以减小桥面的形变,还要求薄膜具有足够低的热导和良好的绝缘性能。因此有必要对所制备的氮化硅薄膜的特性,特别是热学参数进行精确的测量和分析。本文系统地研究了PECVD的工艺参数对薄膜性能的影响。通过高低混频PECVD工艺制备了较低应力的氮化硅薄膜。此外,通过组合不同工艺参数获得满足不同性能需求的氮化硅薄膜。其次,本文设计了专门的热学测试微结构并通过微细加工工艺制得相应器件。通过对磁控溅射基片夹具装置的改进实现了不同尺寸衬底镀膜的需求。还对光刻工艺中牺牲层厚度的控制做了系统研究,表明牺牲层的厚度受旋涂机转速和光刻胶浓度共同控制,对以后的实际操作具有指导意义。最后,本文为了克服宏观工艺对氮化硅薄膜性能的影响局限于具体设备、可移植性差的缺点,尝试从微观角度理解PECVD氮化硅薄膜成膜机理,设计了简易等离子体诊断系统。以期通过郎缪尔探针获得等离子体参数,研究PECVD宏观工艺参数和微观等离子体参数之间关系,最终从微观角度解释PECVD工艺对薄膜性能影响机理。
[Abstract]:Silicon nitride thin films have been widely used in integrated circuits, micromechanical electronics, solar cells and display devices because of their excellent photoelectric and mechanical properties. Plasma enhanced chemical vapor deposition (PECVD) has high deposition efficiency. The advantages of good uniformity and flexible operation have become one of the main methods for preparing silicon nitride films, but the silicon nitride films prepared by PECVD have some stress. At the same time, silicon nitride film is used as the structure supporting layer in MEMS devices such as monolithic integrated uncooled infrared detectors. Electrical insulators and passivated layers of sensitive materials. This not only requires the thin film to have a lower stress to reduce the deformation of the bridge deck, The film is also required to have a sufficiently low thermal conductivity and good insulation. It is therefore necessary to study the properties of the silicon nitride films prepared, In this paper, the influence of PECVD process parameters on the properties of thin films is systematically studied. Silicon nitride thin films with low stress are prepared by high and low mixing PECVD process. Silicon nitride films can be obtained by combining different process parameters. Secondly, In this paper, a special thermal testing microstructure is designed and the corresponding devices are fabricated by micromachining. By improving the device of substrate clamp for magnetron sputtering, the requirements of coating on different sizes of substrates are realized. The control of the thickness of the layer is studied systematically. It is indicated that the thickness of the sacrificial layer is controlled by the rotating speed of the spin-coating machine and the concentration of the photoresist, which is of guiding significance to the practical operation in the future. Finally, in order to overcome the influence of the macroscopic process on the performance of the silicon nitride film, the paper is limited to the specific equipment. In order to obtain plasma parameters by Langmuir probe, a simple plasma diagnostic system was designed to understand the film forming mechanism of PECVD silicon nitride film from microcosmic point of view. The relationship between the macroscopical process parameters of PECVD and the microcosmic plasma parameters is studied. Finally, the mechanism of the effect of PECVD process on the film properties is explained from the microscopic point of view.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TB383.2;TN304.055

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