基于a-IGZ0薄膜材料的半导体器件

发布时间：2018-03-12 08:11

  本文选题：TFT　切入点：SSD　出处：《山东大学》2015年硕士论文　论文类型：学位论文

【摘要】：近十几年来,薄膜晶体管(Thin Film Transistor, TFT)已经成为当前的研究热点,并且得到了广泛的应用,它将有望成为下一代显示器的驱动元件；平面自开关二极管自提出以来,由于它的制备工艺简单以及平面特性,得到了广泛的研究。本论文的研究内容主要包括两个部分,即以PMMA(polymethyl methacrylate)为绝缘层制备高性能的非晶IGZO TFT和制备非晶IGZO SSD (self-switching diode)。(1)以PMMA(polymethyl methacrylate)为绝缘层制备高性能的非晶IGZO TFT我们先以Si02为绝缘层制备优良的a-IGZO TFT,找到相对合适的a-IGZO溅射功率,溅射气体,成膜厚度,退火条件以及源漏电极材料。然后我们基于以上条件,制备以PMMA(polymethyl methacrylate)为绝缘层的高性能非晶IGZO TFT,在这期间我们研究了PMMA的退火温度对器件性能的影响,退火温度分别为120℃,130℃,140℃,150℃,我们发现退火温度过低,器件的漏电流较大,器件的成品率越低,在150℃的退火条件下,器件最稳定,漏电流最小,成品率最高；我们还研究了IGZO界面处理对器件的性能影响,我们分别对IGZO界面作了如下处理：150℃烘烤20分钟,UV ozone处理20分钟,UV ozone 20分钟后接着150℃烘烤20分钟,以及对界面不作任何处理,我们发现对IGZO的界面作以上处理,影响并不大；我们还对PMMA绝缘层作了如下处理：UV-ozone处理20分钟,UV-ozone处理20分钟后接着150℃烘烤20分钟,紫外曝光10分钟,发现不作处理的器件性能最好。然后,我们研究了用不同设备制备栅电极对器件的影响,比如Ti, Al,发现用热蒸发制备的Al电极最好。(2)制备非晶IGZO SSD (self-switching diode)我们用溅射制备了30nm的非晶IGZO薄膜,然后在上面制备了SSD图形,我们研究了湿法刻蚀和干法刻蚀对刻蚀IGZO SSD形貌的影响,湿法刻蚀我们分别用稀盐酸和稀醋酸刻蚀非晶IGZO,干法刻蚀我们用CH4和H2作为刻蚀气体,对IGZO进行千法刻蚀。然后我们研究了用不同电极作为欧姆接触电极对器件性能的影响,分别为Ti,以及Ti/Au。
[Abstract]:In recent years, thin Film transistors (TFTs) have become a hot research topic and have been widely used in the next generation of displays. Because of its simple preparation process and plane characteristics, it has been widely studied. The research contents of this thesis mainly include two parts. That is to say, high performance amorphous IGZO TFT and amorphous IGZO SSD self-switching are prepared by using PMMA(polymethyl methacrylate as insulating layer and IGZO SSD self-switching. 1) High performance amorphous IGZO TFT is prepared by using PMMA(polymethyl methacrylatein as insulating layer. First, we use Si02 as insulator to prepare excellent a-IGZO TFTs, and find a relatively suitable a-IGZO sputtering power. Sputtering gas, film thickness, annealing conditions and source and drain electrode materials. Based on the above conditions, we prepared high performance amorphous IGZO TFTs with PMMA(polymethyl methacrylate as insulating layer. In the meantime, we studied the effect of annealing temperature of PMMA on the properties of the devices. The annealing temperature is 120 鈩，

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