0.13μm嵌入式闪存金属互连短路失效分析与改进

发布时间：2018-03-12 19:48

  本文选题：嵌入式闪存　切入点：金属互连　出处：《半导体技术》2017年02期 　论文类型：期刊论文

【摘要】：研究了一种0.13μm嵌入式闪存产品量产中常见的由于后段主要金属层互连短路引起的闪存电路读取数值失效的案例。通过采用电学失效分析和物理失效分析,成功观察到了含Cu成分较高的θ相(Al2Cu)在阻挡层TiN与Al-Cu金属薄膜界面处析出,导致Ti N刻蚀被阻止。由于Al-Cu物理气相沉积(PVD)时作业腔内的硅片表面温度接近350℃,推测θ相(Al_2Cu)的形成是硅片表面温度偏低所导致的。基于上述假设提出一个优化的Al-Cu物理气相沉积工艺方案,通过提高作业腔中硅片表面温度避免θ相生成。实验结果表明,新的工艺方案可以有效避免θ相(Al_2Cu)形成,并能解决金属互连短路的问题。
[Abstract]:In this paper, a case of reading numerical failure of flash memory circuit caused by interconnect short circuit of main metal layer in 0.13 渭 m embedded flash memory product mass production is studied. Through the use of electrical failure analysis and physical failure analysis, The precipitation of 胃 phase Al _ 2Cu with high Cu content at the interface between the barrier layer TiN and the Al-Cu metal film has been successfully observed, which leads to the prevention of TiN etching. The surface temperature of the silicon wafer in the working cavity is close to 350 鈩，

本文编号：1603052