4H-SiC中Al离子注入及其二次高温退火技术

发布时间：2018-03-13 14:36

  本文选题：H-SiC　切入点：Al离子注入　出处：《微纳电子技术》2017年04期 　论文类型：期刊论文

【摘要】：在4H-SiC中进行Al离子注入,并进行了二次高温退火技术研究。样品中Al离子的注入浓度为3×10~(19)cm~(-3),对样品进行首次高温退火工艺后,在不同条件下对样品进行二次退火。退火后对样品进行霍尔测试和二次离子质谱(SIMS)测试。测试结果显示,二次退火工艺有助于进一步提升Al离子在碳化硅中的有效电激活率。在1 850℃下进行3 min首次退火后,1#样品的有效空穴浓度只有3.23×10~(17)cm~(-3)。在1 850℃下进行3 min的二次退火后,2#样品的有效空穴浓度增大到了6.4×10~(18)cm~(-3)。同时二次退火导致了Al离子总剂量的降低,二次退火时间越长,温度越高,Al离子总剂量降低越显著。
[Abstract]:Al ion implantation was carried out in 4H-SiC and secondary high temperature annealing was carried out. The Al ion implantation concentration in the sample was 3 脳 10 ~ (10) C ~ (19) cm ~ (-1) ~ (-1). The samples were annealed twice under different conditions. After annealing, the samples were tested by Hall test and secondary ion mass spectrometry (SIMS). The results showed that, The secondary annealing process is helpful to further increase the effective electrical activation rate of Al ions in silicon carbide. After 3 min initial annealing at 1 850 鈩，

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