毫米波频段下MOSFET漏极电流噪声的统一模型

发布时间：2018-03-15 21:34

本文选题：MOSFET　切入点：漏极电流噪声　出处：《强激光与粒子束》2017年08期 　论文类型：期刊论文

【摘要】：纳米级金属氧化物半导体场效应晶体管(MOSFET)精确的高频噪声模型是毫米波集成电路低功耗设计的重要基础,而现有的高频漏极噪声模型不仅没有融合器件的衬底效应和栅电阻效应,也没有充分考虑器件的频率和偏置依赖性。针对上述问题,基于纳米MOSFET器件的物理特性,并结合漂移扩散方程和有效栅极过载,建立统一表征强反区到弱反区的频率和偏置依赖性的漏极噪声模型,使之便于移植到先进设计系统(ADS)仿真设计。通过所建模型的仿真结果与实验测试结果进行比较,验证所建模型的准确性。同时比较所建模型对130nm和40nm MOSFET两种不同工艺器件的实用性,验证其对表征40nm MOSFET的毫米波噪声特性的优越性。
[Abstract]:Nano metal oxide semiconductor field effect transistor (MOSFET) high frequency noise is an important basis for the precise model of the low power design of millimeter wave integrated circuit, substrate effect and gate resistance effect and high frequency current drain noise model not only fusion device, there is no full consideration of frequency and bias dependent devices. Aiming at the above problems the physical properties of nano MOSFET devices, based on combining drift diffusion equation and the effective gate drain noise overload, establish unified model characterization of strong to weak anti anti region area frequency and bias dependence, make it easy to transplant to the advanced design system (ADS) simulation design. The simulation results of the model experiment the test results were compared to verify the accuracy of the model. At the same time the utility model of 130nm 40nm and MOSFET two different processing devices, verify the table 40nm MO syndrome The superiority of SFET's millimeter wave noise characteristics.

【作者单位】：西南科技大学信息工程学院;
【基金】：国家自然科学基金项目(69901003) 四川省教育厅资助科研项目
【分类号】：TN386

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