全光再生集成芯片设计与测试

发布时间：2018-03-16 06:39

本文选题：参量放大　切入点：2R全光再生　出处：《电子科技大学》2016年硕士论文　论文类型：学位论文

【摘要】：随着光交换集成芯片技术的发展,全光再生集成芯片也开始受到人们的关注。本文主要研究三阶参量过程中光放大、光整形功能的硅基芯片实现,以及多电平全光再生技术。主要内容及创新如下：1.研究了硅基波导中导波光的非线性传输特性,提出用开关增益来表征硅基波导的参量放大性能,分析了双光子吸收和自由载流子吸收对开关增益的影响。计算表明,通过优化硅基波导横截面尺寸及其长度,可有效提升参量放大的开关增益;利用双光子吸收效应,还可以实现接近阶跃型的功率转移曲线,其整形和限幅效果可通过改变硅基波导的长度以及减小自由载流子吸收加以优化。2.设计加工了三种尺寸的硅基2R全光再生(再放大,再整形)芯片,其长度分别为1cm、2cm、3cm,横截面尺寸均为606nm×220nm。实验测量结果表明,硅基波导的线性损耗为2.2dB/cm,单端口光栅耦合损耗为6dB,同时也观察到了明显的双子吸收以及自由载流子吸收现象。采用数据泵浦方案,测量了3cm再生芯片在不同波长间隔下的功率转移函数,其功率转移函数斜率在1.8附近,并实现了12.5Gbit/s NRZ(non-return-to-zero)信号的再生,得到了消光比高达3.9dB的提升。3.提出一种多电平全光再生器的通用设计方法,并采用归一化功率转移函数来分析全光整形器噪声抑制比性能,给出了马赫曾德尔干涉(Mach-Zehnder interferometer, MZI)结构实现一级近似多电平幅度再生的振幅和相位条件。作为一个设计实例,描述了由自相位调制非线性光纤和光移相器构成的MZI全光再生器设计过程。研究表明,多电平全光再生的性能可由参考功率点来度量,它对应着输入再生电平的上限,再生功率电平数会随着参考功率点的增加而增加。对于高斯噪声劣化的4PAM光信号而言,其归一化幅度抖动为0.02,使用该MZI全光再生器,可以获得约6.5dB的噪声抑制性能,比一阶再生器提高约5dB。
[Abstract]:With the development of optical switching integrated chip technology, all-optical regenerative integrated chip has been paid more and more attention. In this paper, we mainly study the realization of silicon chip with optical amplification and optical shaping function in third-order parametric process. And multilevel all-optical regeneration technology. The main contents and innovations are as follows: 1. The nonlinear propagation characteristics of guided wave in silicon-based waveguides are studied, and a switch gain is proposed to characterize the parametric amplification performance of silicon-based waveguides. The effects of two-photon absorption and free carrier absorption on the switching gain are analyzed. The results show that by optimizing the cross-section size and length of the silicon-based waveguide, the switching gain of parametric amplification can be effectively enhanced, and the two-photon absorption effect is used. The shaping and limiting effects can be optimized by changing the length of the silicon-based waveguide and reducing the free carrier absorption. 2. Three sizes of silicon based 2R all-optical regeneration (reamplifying) are designed and fabricated. The length of the chip is 1 cm ~ (2) cm ~ (2) cm ~ (-1) and the cross section is 606 nm 脳 220 nm ~ (m) respectively. The experimental results show that, The linear loss of silicon-based waveguide is 2.2 dB / cm, and the coupling loss of single-port grating is 6 dB. At the same time, the phenomena of binon absorption and free carrier absorption are also observed. The power transfer function of 3cm regenerative chip at different wavelength intervals was measured. The slope of the power transfer function was around 1.8, and the regeneration of 12.5 Gbit / s NRZN non-return-to-zero) signal was achieved. A general design method of multilevel all-optical regenerator is proposed, and the normalized power transfer function is used to analyze the noise suppression ratio performance of the all-optical shaper. In this paper, the amplitude and phase conditions of MZI (Mach-Zehnder Interferometer) structure for first-order approximate multilevel amplitude regeneration are given. The design process of MZI all-optical regenerator composed of self-phase-modulated nonlinear fiber and optical phase shifter is described. It is shown that the performance of multilevel all-optical regeneration can be measured by reference power points, which corresponds to the upper limit of input regenerative level. The number of regenerated power levels will increase with the increase of reference power points. For the 4PAM optical signal with Gao Si noise deterioration, the normalized amplitude jitter is 0.02. Using the MZI all-optical regenerator, the noise suppression performance of 6.5dB can be obtained. Compared with the first order regenerator, it is about 5 dB.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN40

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