半导体0.18um工艺金属层MUV光刻技术研究及优化

发布时间：2018-03-16 20:18

本文选题：半导体　切入点：金属层　出处：《华东理工大学》2015年硕士论文　论文类型：学位论文

【摘要】：光刻工艺是半导体制造中最为重要的工艺步骤之一。光刻的成本约为整个硅片制造工艺的30%。国内半导体生产厂家主要的光刻机台为ArF、DUV和MUV三种,ArF机台能力主要应用在0.11um以下工艺,DUV主要应用在0.11～0.18um工艺,MUV机台主要是大线宽的工艺,其中MUV机台价格相对较便宜。国内半导体产品大都在0.05um-0.3m之间,鉴于机台能力的限制,许多公司的DUV机台承担大部分产品的产能,但是DUV机台和材料成本都高于MUV机台。本文针对0.18um工艺金属层,对使用MUV机台替代DUV机台的技术工艺优化进行了研究。基于先进的光刻工艺技术,通过对抗反射图层、光刻胶厚度、曝光条件和显影程序分别进行优化,并采用OPC修正技术,提高MUV机台的工艺能力,使MUV机台能生产部分DUV的金属层产品,仿真和生产实践证明了优化工艺的可行性,该工艺的应用能够分担DUV机台负重,在不影响产品质量的情况下,提高产能,降低生产成本。
[Abstract]:Lithography process is one of the most important process steps in semiconductor manufacturing. The cost of lithography is about 30% of the whole silicon wafer manufacturing process. DUV used below 0.11um is mainly used in 0.110.18um process and MUV machine is mainly used in large linewidth process. The price of MUV machine is relatively cheap. Most of the semiconductor products in China are in the range of 0.05um-0.3 m. Due to the limitation of the machine's capacity, many companies' DUV machines bear the capacity of most of the products. However, the cost of DUV machine and material is higher than that of MUV machine. In this paper, the technology optimization of replacing DUV machine with MUV machine is studied for 0.18um process metal layer. The thickness of photoresist, the exposure condition and the development program were optimized respectively, and the OPC correction technology was adopted to improve the technological ability of the MUV machine, so that the MUV machine could produce part of the metal layer products of DUV. The simulation and production practice prove the feasibility of optimizing the process. The application of this process can share the load of DUV machine, improve the production capacity and reduce the production cost without affecting the product quality.
【学位授予单位】：华东理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.7

【参考文献】