溶液法制备氧化钼在聚合物太阳能电池及量子点发光二极管中的应用

发布时间：2018-03-19 01:06

本文选题：聚合物太阳能电池　切入点：量子点发光二极管　出处：《河南大学》2016年硕士论文　论文类型：学位论文

【摘要】：在目前的聚合物太阳能电池和量子点发光二极管中,ITO通常用来作为透明电极。而PEDOT:PSS通常用来修饰ITO表面被做为阳极缓冲层。但是由于PEDOT:PSS本身的酸性会导致聚合物太阳能电池和量子点发光二管的性能衰减。为了解决这个问题,有人开始研发新的阳极缓冲层去替代PEDOT:PSS。其中过渡金属氧化物(WO3,MoO3,NiO,Cu2O,ReO3和V2O5)在很多聚合物太阳能电池中被用作阳极缓冲层,并取得不错的性能。尤其是氧化钼具有一个很深的电子能级态和有效的空穴注入。然而这些具有独特电子特性的薄膜,其获得大多都是通过昂贵的真空设备沉积所制备,这明显表现出了设备高昂的缺点和与大规模的卷对卷制备不相符。本论文主要采用一种简答的溶液法制备氧化钼。本论文主要围绕溶液法制备氧化钼在P3HT:PC60BM聚合物太阳能电池中的应用,以及在量子点发光二管中的应用展开研究。通过对氧化钼薄膜的厚度优化和通过不同的后处理优化,来改变该层的电荷传输能力,进而改善和提升聚合物太阳能电池器件的效率。同样在增加电荷的传输能力外,也平衡了电子和空穴在量子点发光二极管中的复合。本论文的创新工作可以总结为以下三部分:(1)在基于溶液法制备的MoO_x空穴注入层的P3HT:PCBM器件中,通过优化氧化钼的浓度和后处理方式等使得器件的光电转换效率得到优化,并取得了和基于PEDOT:PSS的标准器件相当的效率甚至超过了标准器件的效率,这归因于使用真空退火后氧化钼产生了带隙态更有利于空穴的传输以及其具有较高的光透过率、优良的成膜和较小的表面粗糙度。基于氧化钼制备的聚合物太阳能电池获得了比标准器件更优异的稳定性,其中器件性能的衰减主要是由于电流密度的衰减导致,取得这些性能的原因源于:无机氧化物具有稳定的性能,而PEOT:PSS具有易吸水和酸性导致器件效率的衰退。(2)首先对量子点发光二极管的标准器件进行优化,然后对基于氧化钼空穴传传输层的器件进行了浓度和退火条件的探索和优化。最终使得基于s-MoO_x空穴注入层的绿光和红光QLED器件的电流效率都要优于基于PEDOT:PSS空穴注入层的QLED器件的效率和EQE。更是使得绿光的电流效率和EQE分别从11.9 cd/A和2.9%提高到了16.1 cd/A和4.11%。亦使得红光的电流效率在整个发光的过程中都高于标准器件效率。发现这一影响源于我们制备的s-MoO_x空穴注入层,具有更优异的空穴和电子平衡复合的性能;s-MoO_x薄膜比PEDOT:PSS薄膜更致密和均一,薄膜的表面缺陷态更少,进而使得器件中的电荷被缺陷态俘获的更少,提高器件的性能。(3)本论文制备了全无机QLED器件,其器件结构为:ITO/s-MoO_x/QDs/ZnO/Al,最后器件的亮度达到800cd/m2,电流效率达到了2.94cd/A。这也是目前全溶液法和全无机法制备的QLED器件中较好的器件性能。这主要归因于氧化钼具有较好的载流子平衡复合能力。
[Abstract]:In the current polymer solar cells and quantum dot light emitting diodes (QDLEDs), Ito is usually used as a transparent electrode, while PEDOT:PSS is usually used to modify the surface of ITO as an anode buffer layer. But because of the acidity of PEDOT:PSS itself, it can lead to the polymer. In order to solve this problem, the performance of solar cells and quantum dot luminescent diodes is decaying. New anode buffers have been developed to replace PEDOT: PSSs, in which transition metal oxides such as WO _ 3O _ 3O _ 3O _ 3N _ 2O _ 3 / Cu _ 2O _ 2O _ 3 and V _ 2O _ 5) are used as anode buffers in many polymer solar cells. In particular, molybdenum oxide has a deep electron level state and effective hole injection. However, most of these films with unique electronic properties are prepared by expensive vacuum deposition. This paper mainly uses a simple solution method to prepare molybdenum oxide. This paper mainly focuses on the preparation of molybdenum oxide in P3HT: PC60BM polymer by solution method. Solar cell applications, By optimizing the thickness of molybdenum oxide film and different post-processing optimization, the charge transport ability of the layer can be changed. Thus improving and improving the efficiency of polymer solar cell devices. It also balances the recombination of electrons and holes in QDs. The innovative work in this thesis can be summarized as follows: 1) in P3HT: PCBM devices with MoO_x hole injection layer based on solution method. The optoelectronic conversion efficiency of the device is optimized by optimizing the concentration of molybdenum oxide and the post-processing method, and the efficiency of the standard device based on PEDOT:PSS is even higher than that of the standard device. This is attributed to the existence of band-gap states resulting from the use of molybdenum oxide after vacuum annealing, which is more conducive to the transport of holes and has a higher optical transmittance. The polymer solar cells based on molybdenum oxide have better stability than the standard devices. The attenuation of the device performance is mainly due to the attenuation of the current density. The reason for these properties is that inorganic oxides have stable properties, while PEOT:PSS is characterized by easy water absorption and acid degradation of device efficiency.) first of all, the standard devices of QDs are optimized. Then the concentration and annealing conditions of the devices based on molybdenum oxide hole transfer layer are explored and optimized. Finally, the current efficiency of green and red light QLED devices based on s-MoOx hole injection layer is better than that based on PEDOT:PSS hole injection. The efficiency of the QLED device and the EQE are improved from 11.9 cd/A and 2.9% cd/A to 16.1 cd/A and 4.11 cd/A respectively. It is also found that the current efficiency of the red light is higher than that of the standard device in the whole luminescence process. This effect is due to the hole implantation layer of s-MoOx, which we have prepared. The films with better hole-electron balance recombination properties are denser and more uniform than PEDOT:PSS thin films, and the surface defect states of the films are less, which makes the charge in the device less trapped by the defective state. In this thesis, all inorganic QLED devices have been fabricated. The device structure is:: ITO / s-MoOx / QDsZnO / Al, finally the luminance of the device reaches 800cd/ m2, and the current efficiency reaches 2.94cd/ A. this is also the better device performance of the QLED devices prepared by the all-solution method and the all-inorganic method, which is mainly attributed to the molybdenum oxide having better carrier current. Sub-equilibrium recombination ability.
【学位授予单位】：河南大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TM914.4;TN312.8

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