具有纵向辅助耗尽衬底层的新型横向双扩散金属氧化物半导体场效应晶体管

发布时间：2018-03-19 23:03

本文选题：辅助耗尽衬底层　切入点：横向双扩散功率器件　出处：《物理学报》2017年07期 　论文类型：期刊论文

【摘要】：为了优化横向双扩散金属氧化物半导体场效应晶体管(lateral double-diffused MOSFET,LDMOS)的击穿特性及器件性能,在传统LDMOS结构的基础上,提出了一种具有纵向辅助耗尽衬底层(assisted depletesubstrate layer,ADSL)的新型LDMOS.新加入的ADSL层使得漏端下方的纵向耗尽区大幅向衬底扩展,从而利用电场调制效应在ADSL层底部引入新的电场峰,使纵向电场得到优化,同时横向表面电场也因为电场调制效应而得到了优化.通过ISE仿真表明,当传统LDMOS与ADSL LDMOS的漂移区长度都是70μm时,击穿电压由462 V增大到897 V,提高了94%左右,并且优值也从0.55 MW/cm~2提升到1.24 MW/cm~2,提升了125%.因此,新结构ADSL LDMOS的器件性能较传统LDMOS有了极大的提升.进一步对ADSL层进行分区掺杂优化,在新结构的基础上,击穿电压在双分区时上升到938 V,三分区时为947 V.
[Abstract]:In order to optimize the breakdown characteristics and device performance of lateral double-diffused MOSFETT LDMOSs with transverse double diffusion metal oxide semiconductors, the conventional LDMOS structure is used to optimize the performance of the devices. In this paper, a new type of LDMS with longitudinal auxiliary depletion liner (LDMS) is proposed. The new ADSL layer is added to make the longitudinal depletion region below the drain extend to the substrate by a large margin, thus introducing a new electric field peak at the bottom of the ADSL layer by using the electric field modulation effect. The longitudinal electric field is optimized, and the transverse surface electric field is optimized because of the electric field modulation effect. The ISE simulation shows that when the drift region length of the traditional LDMOS and ADSL LDMOS is both 70 渭 m, The breakdown voltage is increased from 462V to 897V, which is about 94%, and the excellent value is raised from 0.55 MW/cm~2 to 1.24MW / cm ~ (-2), thus the device performance of the new structure ADSL LDMOS is greatly improved than that of the traditional LDMOS. On the basis of the new structure, the breakdown voltage rises to 938 V in two zones and 947 V in three zones.
【作者单位】：西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室;
【基金】：国家重点基础研究发展计划(批准号:2014CB339900,2015CB351906) 国家自然科学基金重点项目(批准号:61234006,61334002)资助的课题~~
【分类号】：TN386

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