GLSI多层铜布线CMP后清洗铜氧化物的去除研究

发布时间：2018-03-22 04:08

本文选题：CMP后清洗　切入点：铜的氧化物　出处：《河北工业大学》2015年硕士论文　论文类型：学位论文

【摘要】：随着微电子产业的快速发展,器件特征尺寸越来越小。生产过程中的各种污染对元器件的性能及可靠性的危害也日益突出,所以对材料表面的清洁度要求更加严格,因此对对微电子清洗领域的研究,具有很重要的意义。本文详细分析了在GLSI多层铜布线片CMP过程中铜氧化物颗粒的形成机理以及存在状态,分析了螯合剂和表面活性剂在铜氧化物颗粒去除方面的作用。利用自主配制的主要成分为螯合剂和表面活性剂的清洗剂结合PVA刷洗法对去除CMP后Cu表面铜氧化物颗粒具有良好的效果。通过AFM检测,分析了FA/OII型螯合剂结合刷洗工艺对于表面粗糙度的影响,并采用台阶仪对不同浓度的FA/OII型螯合剂对Cu的静态腐蚀速率进行了测试,探求清洗剂中螯合剂的合适的浓度,以免在清洗过程中由于FA/OII型螯合剂浓度过大造成粗糙度过大及铜线条的损失。结合超声或PVA刷洗的方法分别对铜光片和铜布线片进行清洗,利用金相显微镜和扫描电子显微镜(SEM)对铜表面清洗前后的形貌进行对比,发现自主配制的该清洗剂能够有效去除CMP后铜表面的铜氧化物杂质,并且该清洗剂成分简单、环保。利用自主配置的清洗剂进行Cu表面铜氧化物颗粒去除实验,通过大量实验得到清洗剂的最佳配比为100ppm FA/OII螯合剂和1000ppm FA/OI非离子表面活性剂,适用于GLSI多层铜布线片的CMP后清洗,清洗后得到的铜氧化物颗粒去除效果已满足生产需要,清洗后Cu表面的粗糙度得到了改善,并且对铜表面的有机物残留的去除也有一定效果。
[Abstract]:With the rapid development of the microelectronics industry, the characteristic size of the devices is becoming smaller and smaller. The pollution in the production process is increasingly harmful to the performance and reliability of the components, so the cleanliness of the material surface is required more strictly. Therefore, it is of great significance to study the field of microelectronic cleaning. In this paper, the formation mechanism and the existing state of copper oxide particles in the CMP process of GLSI multilayer copper wiring sheet are analyzed in detail. The role of chelating agents and surfactants in the removal of copper oxide particles was analyzed. The copper oxide on Cu surface after CMP removal was treated by using the cleaning agent composed of chelating agent and surfactant combined with PVA scrubbing method. Particles have a good effect. Through AFM detection, The influence of FA/OII type chelating agent combined with brushing process on surface roughness was analyzed. The static corrosion rate of Cu by FA/OII chelating agent of different concentration was tested by step analyzer to find out the appropriate concentration of chelating agent in cleaning agent. In order to avoid the loss of roughness and copper line caused by excessive concentration of FA/OII chelator during cleaning process, copper light sheet and copper wiring sheet are cleaned separately by ultrasonic or PVA scrubbing method. The morphologies of copper surface before and after cleaning were compared by metallographic microscope and scanning electron microscope (SEM). It was found that the self-prepared cleaning agent could effectively remove copper oxide impurities on copper surface after CMP, and the composition of the cleaning agent was simple. Environmental protection. Copper oxide particle removal experiments were carried out on Cu surface with self-configured cleaning agent. The optimum proportion of cleaning agent was 100ppm FA/OII chelating agent and 1000ppm FA/OI Nonionic surfactant through a large number of experiments. After CMP cleaning for GLSI multilayer copper wiring sheet, the removal effect of copper oxide particles after cleaning has been satisfied with the production needs, and the roughness of Cu surface has been improved after cleaning. The removal of organic residue on copper surface is also effective.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN405.97

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