耦合同轴磁绝缘传输线的低阻抗大面积轫致辐射二极管设计

发布时间：2018-03-22 11:16

  本文选题：X射线　切入点：大面积轫致辐射二极管　出处：《强激光与粒子束》2017年06期 　论文类型：期刊论文

【摘要】：为了设计与前端低阻抗同轴磁绝缘传输线耦合的大面积轫致辐射二极管,提出了一种利用锥形磁绝缘传输线(MITL)结合阴极开孔结构来对电子输运进行调节的二极管设计方案。该结构的主要特点是在不外加电子输运调控装置的前提下,利用大角度的入射电子产生轫致辐射,在靠近二极管出射窗附近形成大面积准均匀辐射区。采用二维粒子模拟与蒙特卡罗模拟(MCNP 4C)相结合的数值模拟方法对二极管进行了模拟和分析,对于如何构建更好反映角向均匀的MCNP源提出了新的想法。模拟结果表明,该设计方案可以实现在不外加电子输运调控装置的情况下,在二极管后端得到均匀大面积轫致辐射区。
[Abstract]:In order to design a large area Bremsstrahlung diode coupled with the front end low impedance coaxial magnetically insulated transmission line, In this paper, a diode design scheme of adjusting electron transport by using tapered magnetically insulated transmission line (mitl) combined with cathode opening structure is presented. The main feature of the structure is that the electronic transport control device is not applied. Bremsstrahlung radiation is produced by large angle incident electrons, A large area of quasi-uniform radiation region is formed near the output window of the diode. The diode is simulated and analyzed by a numerical simulation method, which combines two-dimensional particle simulation with Monte Carlo simulation of MCNP4C. A new idea on how to construct a MCNP source with uniform angle is put forward. The simulation results show that the proposed scheme can achieve a uniform Bremsstrahlung region at the back end of the diode without the addition of an electronic transport control device.
【作者单位】： 中国工程物理研究院流体物理研究所脉冲功率科学与技术重点实验室;
【分类号】：TN31
，

本文编号：1648408