一种电荷平衡结构的沟槽MOSFET的优化设计

发布时间：2018-03-22 18:45

本文选题：SG-RSO　切入点：MOSFET　出处：《微电子学》2017年04期 　论文类型：期刊论文

【摘要】：为了降低传统沟槽MOSFET的导通电阻和栅漏电容,科研人员提出一种具有电荷平衡结构的SG-RSO MOSFET。在此基础上,利用电荷平衡理论计算出SG-RSO MOSFET结构的主要参数,并借助TCAD仿真软件对外延层厚度及其掺杂浓度、场板氧化层厚度和沟槽深度等主要参数进行合理优化设计。最终,仿真得到击穿电压为92.6 V、特征导通电阻为19.01 mΩ·mm~2、特征栅漏电容为1.45 n F·cm~(-2)的SG-RSO MOSFET。该器件性能优于传统沟槽MOSFET。
[Abstract]:In order to reduce the on-resistance and gate leakage capacitance of conventional grooved MOSFET, a novel SG-RSO MOSFET with charge balance structure is proposed. Based on this, the main parameters of SG-RSO MOSFET structure are calculated by charge balance theory. The main parameters such as the thickness of the epitaxial layer and its doping concentration, the thickness of the oxide layer and the depth of the grooves of the field plate are optimized by means of the TCAD simulation software. The SG-RSO MOSFETs with a breakdown voltage of 92.6 V, a characteristic on-resistance of 19.01 m 惟 mm ~ (-2) and a characteristic gate leakage capacitance of 1.45 n F / cm ~ (-2) are obtained. The performance of the device is superior to that of the conventional grooved MOSFETs.
【作者单位】：中国科学院微电子研究所;中国科学院硅器件技术重点实验室;中国科学院大学;
【基金】：国家重点研发计划资助项目(2016YFB0901800)
【分类号】：TN386

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