S波段GaN功率放大器MMIC

发布时间：2018-03-22 19:53

本文选题：氮化镓　切入点：功率放大器　出处：《半导体技术》2016年04期 　论文类型：期刊论文

【摘要】：基于0.25μm Ga N HEMT工艺,研制了一款S波段Ga N功率放大器单片微波集成电路(MMIC)。该电路采用三级拓扑放大结构,提高了放大器的增益;采用电抗匹配方式,减小了电路输出级的损耗,提高了MMIC的功率和效率。输出级有源器件的布局优化,改善了放大器芯片的温度分布特性。测试结果表明,在2.8~3.6 GHz测试频带内,在脉冲偏压28 V(脉宽100μs,占空比10%)时,峰值输出功率大于60W,功率附加效率大于45%,小信号增益大于34 d B,增益平坦度在±0.3 d B以内,输入电压驻波比在1.7以下;在稳态偏压28 V时,连续波饱和输出功率大于40 W,功率附加效率38%以上。该MMIC尺寸为4.2 mm×4.0 mm。
[Abstract]:Based on the technology of 0.25 渭 m gan HEMT, a monolithic microwave integrated circuit for S-band gan power amplifier is developed. The circuit adopts a three-stage topology amplifier structure, which improves the gain of the amplifier, and adopts reactance matching method. The loss of the output stage is reduced, the power and efficiency of the MMIC are improved, the layout of the output active device is optimized, and the temperature distribution characteristics of the amplifier chip are improved. The test results show that, in the 2.83.6 GHz test band, When the pulse bias voltage is 28 V (pulse width 100 渭 s, duty cycle 10), the peak output power is greater than 60 W, the power additional efficiency is more than 45W, the small signal gain is more than 34 dB, the gain flatness is less than 卤0.3 dB, and the input voltage standing wave ratio is below 1.7. The output power of continuous wave saturation is more than 40 W, and the additional power efficiency is more than 38%. The size of the MMIC is 4.2 mm 脳 4.0 mm.
【作者单位】：中国电子科技集团公司第十三研究所专用集成电路国家重点实验室;中国电子科技集团公司第十三研究所;
【分类号】：TN722.75

【相似文献】