寄生电感对碳化硅MOSFET开关特性的影响

发布时间：2018-03-24 00:03

本文选题：碳化硅MOSFET　切入点：寄生电感　出处：《半导体技术》2017年03期

【摘要】：相比于传统的Si IGBT功率器件而言,碳化硅MOSFET可达到更高的开关频率、更高的工作温度以及更低的功率损耗。然而,快速的暂态过程使开关性能对回路的寄生参数更加敏感。因此,为了评估寄生电感对碳化硅MOSFET开关性能的影响,基于回路电感的概念,将栅极回路寄生电感、功率回路寄生电感以及共源极寄生电感等效成3个集总电感,并且从关断过电压、开通过电流及开关损耗等3个方面,对这3个电感对Si C MOSFET开关性能的影响进行了系统的对比研究。研究表明:共源极寄生电感对开关的影响最大,功率回路寄生电感次之,而栅极回路寄生电感影响最小。最后,基于实验分析结果,为高速开关电路的布局提出了一些值得借鉴的意见。
[Abstract]:Compared with conventional Si IGBT power devices, sic MOSFET can achieve higher switching frequency, higher operating temperature and lower power loss. The fast transient process makes the performance of the switch more sensitive to the parasitic parameters of the circuit. Therefore, in order to evaluate the effect of parasitic inductance on the performance of silicon carbide MOSFET switch, based on the concept of loop inductance, the parasitic inductance of gate circuit is introduced. The parasitic inductance of power loop and the parasitic inductance of common source are equivalent to three lumped inductors, and from the aspects of switching off overvoltage, switching on overcurrent and switching loss, etc. The effects of the three inductors on the performance of sic MOSFET switches are compared. The results show that the parasitic inductance of common source is the most important, the parasitic inductance of power loop is the second, and the parasitic inductance of gate loop is the least. Finally, Based on the experimental results, some suggestions for the layout of high-speed switching circuits are put forward.
【作者单位】：华北电力大学新能源电力系统国家重点实验室;全球能源互联网研究院;
【基金】：国家科技部项目(2016YFB0400503)
【分类号】：TN386

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