1200V碳化硅MOSFET的仿真设计和优化

发布时间：2018-03-24 13:47

本文选题：1200V　切入点：碳化硅　出处：《湖南大学》2015年硕士论文

【摘要】：随着智能电网,新能源发电,大电机变频节能技术的快速发展,电力电子技术在特大容量电能转换应用领域正面临前所未有的机遇和挑战。SiC(碳化硅)材料具体有禁带宽度大、击穿电场高、电子迁移率速度快、热导率高等物理性质方面的优势,这些特点让碳化硅十分适用于高温、高压、高频和抗辐射的环境中。其中,高的热导率有益于大功率器件的热耗散和高度集成；高的饱和速度可以使之应用于雷达功率器件和快速器件；高的临界位移能使碳化硅器件的抗辐射性能优于硅基器件。这些特性使得碳化硅器件在高频、高温、高功率、抗辐射等方面具有良好的性能,为其在航空航天、军事、石油勘测、核能、通讯等领域的应用奠定了良好的基础。1200V碳化硅MOSFET凭借其低导通比电阻和超快的开关速度等性能优点,成为了研究和产业化的热点,也被广泛认为是最有可能取代1200V绝缘栅双极型晶体管(IGBT)的器件。本文在半导体物理学和功率器件的基础上,运用SILVACO公司的Atlas软件,对1200V的碳化硅MOSFET进行了物理建模的修改和器件电学特性的仿真,设计了1200V碳化硅MOSFET元胞,并对碳化硅MOSFET结构中的基区厚度和掺杂浓度、JFET区宽度和掺杂浓度、p-base区厚度和掺杂浓度、沟道长度度等核心器件参数进行了优化,得到了更低的导通比电阻和更高的击穿电压,实现了1200V碳化硅MOSFET的设计优化和性能的提高。最后本文讨论了具有n型电流扩展层(Current Spreading Layer, CSL)和超级结(Super Junction, SJ)的新型SiC MOSFET结构,拥有新型结构的的碳化硅MOSFET可以进一步提高其击穿电压并降低其导通电阻,实现其性能的进一步优化。
[Abstract]:With the rapid development of smart grid, new energy generation and large motor frequency conversion and energy saving technology, power electronics technology is facing unprecedented opportunities and challenges in the field of super capacity power conversion application. The advantages of physical properties such as high breakdown electric field, high electron mobility and high thermal conductivity make silicon carbide very suitable for high temperature, high pressure, high frequency and radiation resistant environments. High thermal conductivity is beneficial to the thermal dissipation and high integration of high power devices, and high saturation speed can be used in radar power devices and fast devices. The high critical displacement can make silicon carbide devices have better anti-radiation performance than silicon based devices. These characteristics make silicon carbide devices have good performance in high frequency, high temperature, high power, radiation resistance and so on, for aerospace, military, The application of petroleum survey, nuclear energy, communication and other fields has laid a good foundation. 1200V silicon carbide MOSFET has become a hot spot in research and industrialization because of its advantages of low on-specific resistance and ultra-fast switching speed. It is also widely considered to be the most likely device to replace 1200V insulated gate bipolar transistor (IGBT). Based on semiconductor physics and power devices, the Atlas software of SILVACO Company is used in this paper. The physical modeling of 1200V silicon carbide MOSFET and the simulation of the electrical characteristics of the device are carried out. The 1200V silicon carbide MOSFET cell is designed. The thickness of the base region and the doping concentration in the silicon carbide MOSFET structure, the width of the base region and the width of the doping concentration, the thickness of the p-base region and the doping concentration, are also studied. The core device parameters such as channel length are optimized to obtain lower on-ratio resistance and higher breakdown voltage. The design optimization and performance improvement of 1200V sic MOSFET are realized. Finally, a new SiC MOSFET structure with current Spreading layer (CSL) and Super Junction (SJS) is discussed. Silicon carbide MOSFET with a new structure can further improve its breakdown voltage and reduce its on-resistance to achieve further performance optimization.
【学位授予单位】：湖南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

【相似文献】