光电探测器等效电路模型和实验研究

发布时间：2018-03-26 01:34

本文选题：光电探测器　切入点：等效电路　出处：《重庆大学》2015年硕士论文

【摘要】：光电探测器是光电子技术的核心部件,建立了光信息与电信号之间的联系,在生活、科研、军事等方面起着重要的作用。因此对光电探测器的研究引起越来越多的重视。常规的仿真软件中没有光电子器件的模型,不能对光电探测器进行定量分析;而TCAD等光电子器件仿真软件的应用涉及到大量的结构和工艺参数,应用并不广泛,因此对光电探测器的理论研究还不够充分,本文从PIN光电二极管出发进行研究,建立了光电探测器等效电路模型,并且从仿真分析和实验论证两个方面描述了模型的可行性和探测器的性能。本文首先分析了光电探测器的工作原理和结构特点,基于PIN光电二极管内部载流子的速率方程、双极输运方程和边界条件,通过等效变换和全局参数的引入,将各个部分等效为电学元件,考虑到寄生参数和暗电流,建立了PIN光电二极管的等效电路。然后在PSpice软件中建立电路仿真模型。在建立的PIN光电二极管仿真模型的基础上通过电学仿真软件对其性能进行了定量的分析。主要包括:PIN光电二极管的I-V特性仿真分析,对脉冲信号的响应仿真分析,暗电流的仿真分析;另外从时域和频域两个方面,仿真了本征区宽度和复合速度等内部关键参数及寄生电阻电容等寄生参数对输出光电流和频率带宽的影响。结合理论分析验证了模型的可行性。之后通过相同的方法分别建立了PN结光电二极管、雪崩光电二极管和光电导的等效电路。除此之外,对于PN结光电二极管,从光电流的产生机理出发,直接求解各个区域产生的光电流成分并相加,介绍了另外一种建立等效电路模型的方法。对于实验部分,首先设计出红外脉冲激光二极管驱动电路,分析了外界参数对输出激光脉宽和峰值的影响。以此脉冲激光作为光源,与专业光电探测器进行比较,分析了自制PIN光电二极管探测电路性能优劣。而后研究了探测电路反偏电压、光照强度、激光脉宽、饱和效应等因素对探测电路输出光电流的影响,分析了输出光电流的特性。
[Abstract]:Photodetectors are the core components of optoelectronic technology. They have established the relationship between optical information and electrical signals in life and scientific research. Therefore, more and more attention has been paid to the research of photodetectors. There is no model of optoelectronic devices in the conventional simulation software, so the quantitative analysis of photodetectors cannot be carried out. However, the application of TCAD and other optoelectronic device simulation software involves a large number of structure and process parameters, and is not widely used, so the theoretical study of photodetectors is not enough. The equivalent circuit model of photodetector is established, and the feasibility of the model and the performance of the detector are described from the aspects of simulation analysis and experimental demonstration. Based on the rate equation of internal carrier, bipolar transport equation and boundary condition of PIN photodiode, by introducing equivalent transformation and global parameters, each part is equivalent to electrical element, taking into account parasitic parameters and dark current. The equivalent circuit of PIN photodiode is established, and then the circuit simulation model is established in PSpice software. Based on the PIN photodiode simulation model, the performance of PIN photodiode is quantitatively analyzed by electrical simulation software. Mainly including the I-V characteristic simulation analysis of the 1: PIN photodiode. The response simulation analysis of pulse signal, the simulation analysis of dark current, and the analysis of time domain and frequency domain, The effects of internal key parameters such as intrinsic zone width and compound velocity and parasitic parameters such as parasitic resistance and capacitance on output photocurrent and frequency bandwidth are simulated. The feasibility of the model is verified by theoretical analysis. Methods PN junction photodiodes were established, The equivalent circuit of avalanche photodiode and photoconductive. In addition, for PN junction photodiode, from the mechanism of photocurrent generation, the photocurrent components generated in each region are directly solved and added together. In this paper, another method of establishing equivalent circuit model is introduced. In the experimental part, the driving circuit of infrared pulse laser diode is designed, and the influence of external parameters on the pulse width and peak value of output laser is analyzed. The pulse laser is used as light source. Compared with the professional photodetector, the performance of the self-made PIN photodiode detection circuit is analyzed, and the reverse bias voltage, the illumination intensity, the laser pulse width of the detection circuit are studied. The effect of saturation effect on the output photocurrent of the detection circuit is analyzed, and the characteristics of the output photocurrent are analyzed.
【学位授予单位】：重庆大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN15

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