光学光刻工艺中的光强分布模拟

发布时间：2018-03-27 05:04

本文选题：SU-8胶　切入点：光强分布　出处：《东南大学》2015年硕士论文

【摘要】：如今,基于MEMS技术的产品逐渐应用于现代生活的各个领域。在MEMS制造工艺中,由于其器件结构的特殊性,通常选取SU-8胶作为形成高深宽比结构的主流工艺。以往,为了模拟曝光后SU-8胶内部的光强分布,进而预测SU-8胶显影后的最终形貌。一般采取的方法是传统几何光学,即标量衍射理论。这一方法在精度要求不高的前提下,能够给出较为准确的结果。但随着MEMS的飞速发展,其器件尺寸不断减小,结构复杂程度不断提高,利用传统几何光学对SU-8胶进行建模仿真的结果与实验结果将会产生明显的偏差。这时,亟需建立一个更为精确的电磁场求解模型,亦即矢量衍射理论。本文所研究的曝光模型,选取基于严格电磁场理论的波导法作为其建模的理论依据。在建模过程中充分考量空气间隙、入射角度以及衬底反射等工艺参数对光强分布的影响。并通过数学抽象以及具体的编程工作,建立了适合于计算垂直/倾斜光刻的二维/三维光强分布模型,该模型可较为真实地描述光刻胶内部的光强分布。在此基础上,再结合已有的其他模块从而形成一套能精确、快速模拟光刻全过程的计算机模拟软件,该软件可以对光刻胶内部的光强分布以及光刻胶显影形貌进行模拟。结合具体的SU-8胶、接近式光刻工艺,本文给出了相应的光强分布模拟结果以及光刻胶显影后的最终形貌。同时探究了各个工艺参数对光学光刻工艺的影响,包括空气间隙、衬底反射、曝光角度等。就垂直入射和倾斜入射这两种不同情况,分别进行了SU-8胶相关光刻实验,并将此实验结果和模拟结果进行对比、分析。从而验证了本模型的正确性。目前针对光刻工艺中的光强分布模拟,国内的研究主要集中在标量衍射理论,而对矢量衍射理论的研究还少有涉及。因此,本课题工作具有一定的参考价值。最后,总结整个论文,并就将来进一步的工作方向提出一些具有展望性的意见。
[Abstract]:Nowadays, the products based on MEMS technology are gradually used in every field of modern life. In MEMS manufacturing process, because of the particularity of its device structure, SU-8 adhesive is usually chosen as the mainstream technology to form high aspect ratio structure. In order to simulate the light intensity distribution of SU-8 gel after exposure, and then predict the final appearance of SU-8 gel after development, the general method is traditional geometrical optics, that is, scalar diffraction theory. But with the rapid development of MEMS, the device size is decreasing and the structure complexity is increasing. The results of modeling and simulation of SU-8 adhesive using traditional geometry optics will have obvious deviation from the experimental results. At this time, it is urgent to establish a more accurate electromagnetic field solution model, that is, vector diffraction theory. The waveguide method based on the strict electromagnetic field theory is chosen as the theoretical basis for the modeling. The influence of process parameters, such as incident angle and substrate reflection, on the intensity distribution of light is studied. Through mathematical abstraction and concrete programming, a two-dimensional / three-dimensional light intensity distribution model for vertical / oblique lithography is established, which is suitable for the calculation of vertical / oblique lithography. The model can describe the light intensity distribution in photoresist more realistically. On this basis, combining with other existing modules, a set of computer simulation software which can accurately and quickly simulate the whole process of lithography can be formed. The software can simulate the light intensity distribution inside photoresist and the development morphology of photoresist. Combined with specific SU-8 adhesive, proximity lithography technology, In this paper, the simulation results of the intensity distribution and the final appearance of the photoresist after development are given. The influence of various technological parameters on the optical lithography process, including air gap, substrate reflection, is also discussed. Exposure angle and so on. For the two different cases of vertical incidence and oblique incidence, the SU-8 gum related lithography experiments were carried out, and the experimental results were compared with the simulation results. At present, the research on intensity distribution in lithography is mainly focused on scalar diffraction theory, but not on vector diffraction theory. The work of this paper has certain reference value. Finally, the whole paper is summarized, and some prospective suggestions are put forward for the future work direction.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.7

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