GaN高电子迁移率晶体管强电磁脉冲损伤效应与机理

发布时间：2018-03-27 18:09

本文选题：GaN　切入点：高电子迁移率晶体管　出处：《物理学报》2016年03期

【摘要】：提出了一种新型GaN异质结高电子迁移率晶体管在强电磁脉冲下的二维电热模型,模型引入材料固有的极化效应,高场下电子迁移率退化、载流子雪崩产生效应以及器件自热效应,分析了栅极注入强电磁脉冲情况下器件内部的瞬态响应,对其损伤机理和损伤阈值变化规律进行了研究.结果表明,器件内部温升速率呈现出"快速-缓慢-急剧"的趋势.当器件局部温度足够高时(2000 K),该位置热电子发射与温度升高形成正反馈,导致温度急剧升高直至烧毁.栅极靠近源端的柱面处是由于热积累最易发生熔融烧毁的部位,严重影响器件的特性和可靠性.随着脉宽的增加,损伤功率阈值迅速减小而损伤能量阈值逐渐增大.通过数据拟合得到脉宽τ与损伤功率阈值P和损伤能量阈值E的关系.
[Abstract]:This paper introduces a novel GaN heterojunction high electron mobility transistor in strong electromagnetic pulse of the two-dimensional electro thermal model, the polarization effect model into the intrinsic material, the rate of degradation under high field electron transfer, avalanche effect and self heating effect of the device, the gate injection of strong electromagnetic pulse transient response device inside the case, the damage mechanism and damage threshold were studied. The results showed that the rate of showing a "fast slow sharply" trend inherent temperature rise device. When the local temperature device is high enough (2000 K), the position of the hot electron emission and temperature rise of a positive feedback, leading to a sharp increase in the temperature until it burned. At the end of the cylindrical gate near the source is due to heat accumulation is the most prone to melting burned parts, seriously affect the characteristic and reliability of the device. With the increase of pulse width, the damage power threshold decreases rapidly The damage threshold of energy increases. Relationship between the pulse width T and the damage power threshold and the damage threshold of E P energy by data fitting.

【作者单位】：西安电子科技大学微电子学院教育部宽禁带半导体材料与器件重点实验室;中国科学院半导体研究所;
【基金】：国家重点基础研究发展计划(批准号:2014CB339900) 中国工程物理研究院复杂电磁环境科学与技术重点实验室开放基金(批准号:2015-0214.XY.K)资助的课题~~
【分类号】：TN386

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