混合P-i-N和异质结二极管的设计与仿真

发布时间：2018-03-28 20:22

本文选题：异质结　切入点：碳化硅　出处：《固体电子学研究与进展》2017年03期

【摘要】：设计了一个混合P-i-N和多晶硅/4H-SiC异质结的二极管结构(MPH diode)。当正向偏置时,异质结区在低电压下开启,随着正偏电压的不断加大,P~+4H-SiC区域注入少数载流子到漂移区,在异质结下就会有明显的电导调制效应。异质结部分的正向传导增强,即使在高电流密度时,大多数的电流运输也会通过异质结区,这样会使得正向压降和储存电荷之间有一个很好的折衷。当反向偏置时,沟槽MOS结构形成夹断,从而使器件有低漏电流密度和高阻断电压。采用仿真工具Silvaco TCAD来研究MPH二极管的电学特性。结果表明,MPH二极管有低正向开启电压(0.8V),而且当正向电压大于2.7V时,P-i-N区域导通,正向电流密度快速增大。与MPS二极管相比,MPH二极管同样可以工作在高压状态下(2 332V),并且有较小的反向漏电流和较好的反向恢复特性。
[Abstract]:A hybrid P-i-N and polysilicon / 4H-SiC heterojunction diode structure is designed. When the bias is forward, the heterojunction region opens at a low voltage, and with the increasing of the positive bias voltage, a few carriers are injected into the drift region in the P- 4H-SiC region. There are obvious conductance modulation effects in the heterojunction. The positive conduction of the heterojunction part is enhanced, and even at high current density, most of the current transport will pass through the heterojunction region. This creates a good tradeoff between the forward pressure drop and the storage charge. When the reverse bias occurs, the groove MOS structure forms a clamp. So that the device has low leakage current density and high blocking voltage. The electrical characteristics of MPH diode are studied by Silvaco TCAD. The results show that there is a low forward opening voltage of 0.8 V ~ (-1), and when the forward voltage is more than 2.7 V, the P-i-N region is switched on. The forward current density increases rapidly. Compared with MPS diodes, the MPH diodes can also work at high voltage with smaller reverse leakage current and better reverse recovery characteristics.
【作者单位】：哈尔滨工程大学信息与通信工程学院;
【基金】：国家自然科学基金资助项目(51371063)
【分类号】：TN31

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