中低压IGBT短路失效分析研究

发布时间：2018-03-29 06:12

  本文选题：绝缘栅双极型晶体管　切入点：短路　出处：《电力电子技术》2017年07期

【摘要】：针对中低压绝缘栅双极型晶体管(IGBT)器件GPU50HF120D1W1进行了不同短路时间的测试,发现存在4种短路失效模式,通过定义临界短路能量,将4种失效模式分为两大类。高于临界能量的失效模式中,延迟失效的主要原因是漏电流与温度形成了正反馈,导致器件持续升温,超长时失效是延迟失效的一种极限情况;而低于临界能量的失效模式中,造成短时失效的主要原因是器件加工生产过程中的缺陷和不一致性引起局部漏电流过大,造成关断失效的主要原因是大电流快速关断和动态雪崩触发了IGBT的闩锁效应。
[Abstract]:In this paper, the short circuit time of GPU50HF120D1W1 is tested. Four kinds of short circuit failure modes are found. The critical short circuit energy is defined by defining the critical short circuit energy. Four kinds of failure modes are divided into two categories. In the failure modes with higher critical energy, the main reason of delay failure is the positive feedback between leakage current and temperature, which leads to the continuous heating of the device. However, in the failure mode with lower critical energy, the main cause of short-time failure is the excessive local leakage current caused by the defects and inconsistency in the manufacturing process of the device. The main causes of turn-off failure are fast turn-off of large current and dynamic avalanche which trigger the latch effect of IGBT.
【作者单位】： 上海交通大学微电子学院;宁波达新半导体有限公司;
【分类号】：TN322.8
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本文编号：1679880