无结场效应晶体管的性能研究

发布时间：2018-03-29 13:36

本文选题：无结　切入点：SILVACO　出处：《沈阳工业大学》2017年硕士论文

【摘要】：根据摩尔定律(集成电路上可容纳的晶体管数目,每隔18个月便会增加一倍),集成电路的基本单元MOSFET的尺寸会越来越小,随之而来不仅在制作工艺上的难度加深,短沟道效应也愈发凸显,功耗也越来越大。因此,一种新型的晶体管——无结场效应晶体管(Junctionless Field Effect Tansistor)被广泛提出,该器件的源、漏沟道具有相同的掺杂类型和掺杂浓度,沿着沟道方向,不存在MOSFET中的“结”,大大节省了退火技术,降低了制作成本。研究结果表明,无结场效应晶体管具有开关比高、沟道迁移率高、亚阈值斜率较小等优点,并有效抑制了短沟道效应。为了更深入的了解无结场效应晶体管的基本特性,以及影响其性能的相关因素,论文首先介绍了无结场效应晶体管的基本结构与导通原理,接着对所使用的模拟仿真软件SILVACO以及涉及到的SOI基本知识进行了简单说明,然后从硅纳米线掺杂浓度不均匀、氧化物厚度不对称、SOI所加外电压的不同以及SOI各部分厚度的不同几个方面分别分析其对无结场效应晶体管性能的影响。利用SILVACO半导体模拟仿真软件,以立体栅、双栅结构为例,对三种方案进行了具体的仿真研究。并且通过对仿真结果进行分析对比,分析其亚阈值摆幅、载流子浓度、电场强度、正向驱动电流以及反向泄漏电流等等特性,得出影响无结场效应晶体管性能的关键要素。
[Abstract]:According to Moore's Law, the number of transistors that can be accommodated in an integrated circuit doubles every 18 months, and the size of the basic unit of the integrated circuit, the MOSFET, becomes smaller and smaller, making it not only more difficult to fabricate. Therefore, a new type of transistor, Junctionless Field Effect transistor (Junctionless Field Effect transistor), has been widely proposed. The source and drain channel of the device have the same doping type and doping concentration. Along the channel direction, there is no "junction" in MOSFET, which greatly saves the annealing technology and reduces the production cost. The results show that the non-junction FET has the advantages of high switching ratio, high channel mobility and low sub-threshold slope. In order to better understand the basic characteristics of the junction free field effect transistor and the related factors affecting its performance, this paper first introduces the basic structure and the conduction principle of the non junction field effect transistor. Then the simulation software SILVACO and the basic knowledge of SOI are simply explained, and then the concentration of silicon nanowires is not uniform. The effects of different external voltages on the performance of the non-junction field-effect transistors (FET) and the thickness of the different parts of the SOI are analyzed respectively. Using the SILVACO semiconductor simulation software, the solid gate and double-gate structures are taken as examples. Through the analysis and comparison of the simulation results, the characteristics of sub-threshold swing, carrier concentration, electric field intensity, forward drive current and reverse leakage current are analyzed. The key factors affecting the performance of the junction free field effect transistors are obtained.
【学位授予单位】：沈阳工业大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386

【相似文献】