基于0.18μm CMOS工艺的太赫兹成像芯片研究

发布时间：2018-03-30 18:37

本文选题：CMOS　切入点：分布式阻性自混频　出处：《东南大学》2015年硕士论文

【摘要】：与传统的微波毫米波成像技术相比,太赫兹成像提供了更高的分辨率。利用硅基MOS器件在超过截止频率时分布式阻性自混频特性,可将其应用于太赫兹成像。由于硅基芯片具有高集成度、低成本等优点,基于硅基CMOS工艺的太赫兹成像的原理、方法与芯片已成为当前的研究热点。本文采用TSMC 0.18μm CMOS工艺,研究了硅基太赫兹频段成像的方法与关键器件。论文的研究成果包括以下几个方面：1)针对MOS管在接近或者超过截止频率处的分布式阻性自混频模型进行理论分析,验证了其检测灵敏度与太赫兹波功率的关系公式。通过在0.18μm CMOS工艺中的仿真分析,得到检测管的输出特性。测试结果表明其应用于太赫兹成像的可行性。2)研究了基于0.18μm CMOS工艺的在片天线,对工作在340GHz,610GHz和700GHz的在片天线进行了仿真分析与布版。3)研究了应用于太赫兹成像的运算放大器,提出了使得输入端直流电平为零的电路结构,以保证运放与检测管的有效连接；为了应对工艺误差,在运放输出端设置调节直流工作点的位置,保证运算放大器能够在开环情况下正常工作。4)基于上述研究成果,仿真设计了单像素成像单元的与成像阵列,对模块连接方式进行了研究,以保证成像单元与阵列的最大检测灵敏度。
[Abstract]:Compared with traditional microwave millimeter wave imaging, terahertz imaging provides higher resolution.Silicon based MOS devices can be applied to terahertz imaging by using the distributed resistive self-mixing characteristics when the cut-off frequency exceeds the cut-off frequency.Because silicon chip has the advantages of high integration and low cost, the principle, method and chip of terahertz imaging based on silicon based CMOS process have become a hot research topic.In this paper, TSMC 0.18 渭 m CMOS process is used to study the imaging method and key devices of silicon based THz band.The research results of this paper include the following aspects: 1) the distributed resistive self-mixing model of MOS tube near or beyond cutoff frequency is analyzed theoretically, and the relation formula between the detection sensitivity and THz wave power is verified.Through simulation analysis in 0.18 渭 m CMOS process, the output characteristics of the test tube are obtained.The test results show that it is feasible to apply it to terahertz imaging. (2) the on-chip antenna based on 0.18 渭 m CMOS technology is studied. The on-chip antenna operating at 340 GHz or 610GHz and 700GHz is simulated and the layout plate. 3) the operational amplifier for terahertz imaging is studied.A circuit structure of zero DC level at the input end is proposed to ensure the effective connection between the operational amplifier and the detection tube, and to deal with the process error, the position of adjusting the DC operating point is set at the output end of the operational amplifier.To ensure that the operational amplifier can work normally under the open loop. (4) based on the above research results, the single pixel imaging unit and the imaging array are simulated and designed, and the connection mode of the modules is studied.To ensure the maximum detection sensitivity of imaging units and arrays.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN432

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