基于TDTR方法的碳化硅低温导热性能实验研究

发布时间：2018-03-31 20:48

  本文选题：时域热反射法　切入点：低温系统　出处：《工程热物理学报》2017年07期

【摘要】：低温条件下碳化硅等半导体材料热导率的实验研究极少,数据匮乏,无法满足理论模型的优化需求。现有实验测量以接触式的稳态法导热系数测量为主,实验误差大,且低温测量成本过高。本文通过常规飞秒激光抽运探测热反射法与低温系统的有机结合,完成了4~300 K低温条件下单晶碳化硅热导率的测试及其随温度的变化规律,研究表明单晶碳化硅热导率在100 K左右存在极大值,温度低于100 K时其热导率与温度呈正相关,温度高于100 K时其热导率与温度呈负相关。极值点的位置与理论值的偏差可能是由于样品电子浓度、缺陷分布等因素影响。
[Abstract]:There are few experimental studies on thermal conductivity of silicon carbide and other semiconductor materials at low temperature, and the data are scarce and can not meet the requirements of the optimization of theoretical models. The existing experimental measurements are mainly based on the contact steady-state thermal conductivity measurement, and the experimental errors are large. The low temperature measurement cost is too high. By combining the conventional femtosecond laser pumped detection thermal reflection method with the low temperature system, the thermal conductivity of single crystal silicon carbide at low temperature of 4 ~ 300K and its variation law with temperature have been measured. The results show that the thermal conductivity of single crystal silicon carbide is maximum at 100 K, and the thermal conductivity is positively correlated with the temperature when the temperature is lower than 100 K. When the temperature is higher than 100K, the thermal conductivity is negatively correlated with the temperature, and the deviation between the position of the extreme point and the theoretical value may be due to the influence of the electron concentration of the sample, the distribution of defects, and so on.
【作者单位】： 中国科学院工程热物理研究所;中国科学院大学;中国石油大学(华东)储运与建筑工程学院;大连理工大学海洋能源利用与节能教育部重点实验室;
【基金】：国家自然科学基金资助项目(No.51606193,No.51336009)
【分类号】：TN304.24
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本文编号：1692381