基于0.25μm工艺的低压Power MOS设计与研究

发布时间：2018-04-01 12:20

本文选题：DC-DC转换器　切入点：Power　出处：《东南大学》2015年硕士论文

【摘要】：Power MOS器件具有特征导通电阻小、开关速度快及集成密度高等优点,已广泛应用于DC-DC开关电源转换器中。然而,Power MOS器件作为DC-DC转换器的核心单元,经常工作在高电压、大电流及强电场的条件下,存在着较高的失效风险。目前,关于Power MOS器件的研究还主要集中于中高压器件,而较少关注应用越来越广泛的低压Power MOS,因此,迫切需要对低压Power MOS器件的电学性能及可靠性展开深入研究,这对研制高性能低压大功率DC-DC转换器具有重要意义。本文从DC-DC转换器的应用需求出发,着重研究了器件结构参数与版图布局两方面因素对低压Power MOS器件特征导通电阻、击穿特性以及静电泄放(Electrostatic Discharge,简称ESD)防护能力的影响,并对其内在物理机理进行了深入探讨。对于特征导通电阻的研究,使用最小二乘法对测试数据进行拟合,进而对各因素的影响程度进行量化比较和分析：对于击穿特性的研究,通过关态击穿电压和开态击穿电压两方面指标对器件进行综合评价；对于ESD鲁棒性的研究,以二次击穿电流值作为其ESD防护能力的判别标准,深入分析了各参数对于器件ESD防护能力及失效类型影响的物理机理。综合上述研究结果,确定了低压Power MOS器件最优的结构和版图参数。测试数据表明,所设计Power MOS器件关态击穿电压BVoff=10.1V,开态击穿电压BVon=9.6V,特征导通电阻Rdson, sp=4.5mΩ·mm2,人体放电模式(Human-Body Model,简称HBM)下ESD8kV,达到预期的设计指标。该器件已成功应用于一款5V-3.3V/2A降压型同步整流DC-DC转换器。
[Abstract]:Power MOS devices have been widely used in DC-DC switching power supply converters due to their advantages of low on-resistance, high switching speed and high integration density. However, as the core units of DC-DC converters, MOS devices often work in high voltage. Under the condition of high current and strong electric field, there is a high risk of failure. At present, the research on Power MOS devices is mainly focused on medium-high voltage devices, but less on low-voltage Power MOSs, which are more and more widely used. The electrical properties and reliability of low-voltage Power MOS devices need to be deeply studied, which is of great significance to the development of high performance low-voltage and high-power DC-DC converters. This paper starts from the application requirements of DC-DC converters. The effects of structure parameters and layout on the characteristic on-resistance, breakdown characteristics and electrostatic discharge (ESD) protection of low-voltage Power MOS devices are studied. For the study of characteristic on-resistance, the least square method is used to fit the test data, and then the influence degree of each factor is compared and analyzed quantitatively. The device is evaluated synthetically by two aspects of on-off breakdown voltage and on-state breakdown voltage, and the secondary breakdown current value is used as the criterion of ESD protection ability for the research of ESD robustness. The physical mechanism of the influence of each parameter on the ESD protection ability and failure type of the device is analyzed in depth. The optimum structure and layout parameters of the low-voltage Power MOS device are determined by synthesizing the above results. The test data show that the optimum structure and layout parameters of the low-voltage Power MOS device are obtained. The designed Power MOS device has been successfully applied to a 5V-3.3V/2A step-down synchronous rectifier DC-DC converter. The designed Power MOS device has a breakdown voltage of 10.1V, an on-state breakdown voltage of 9.6V, a characteristic on-resistance of Rdson, a sp=4.5m 惟 mm2, and an ESD of 8kV under the human discharge mode Human-Body Model (HBMs). The device has been successfully applied to a 5V-3.3V/2A step-down synchronous rectifier DC-DC converter.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

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