单层二硫化钼的化学气相生长研究

发布时间：2018-04-01 14:23

本文选题：单层MoS_2　切入点：化学气相沉积　出处：《杭州电子科技大学》2017年硕士论文

【摘要】：二硫化钼(MoS_2)是一种类石墨烯材料,单层MoS_2是直接带隙半导体材料,弥补了零带隙石墨烯的不足。由于单层MoS_2拥有良好的光电性能,成为制备光电器件的最佳选择。然而,制备大面积大尺寸的单层MoS_2非常困难,无法满足大规模制造光电器件的需求。在本文中使用化学气相沉积(CVD)法生长大尺寸高质量的单层MoS_2,其间涉及均匀形核和非均匀形核两种不同形核方式。在非均匀形核法中使用氧化石墨烯量子点,石墨烯量子点和h-BN作为形核剂来提高单层MoS_2的尺寸和实验的重复率。并且使用原子力显微镜,扫描电镜,PL光谱和Raman光谱对生长出来的单层MoS_2进行表征测试。生长期间同时发现不同颜色的菱形MoS_2薄片,通过各种表征测试发现紫色菱形MoS_2薄片拥有良好的发光强度,它的发光强度是微机械剥离法制备的单层MoS_2的8倍。本文的研究会使得单层MoS_2在光电器件拥有更广泛的应用。
[Abstract]:Molybdenum disulfide (MoS _ 2) is a kind of graphene material, and monolayer MoS_2 is a direct band-gap semiconductor material, which makes up for the deficiency of zero-band gap graphene. Because monolayer MoS_2 has good photoelectric properties, it is the best choice to fabricate optoelectronic devices. It is very difficult to prepare monolayer MoS_2 with large area and large size. In this paper, the chemical vapor deposition (CVD) method is used to grow large size and high quality monolayer MoS _ 2, which involves two different nucleation modes: homogeneous nucleation and non-uniform nucleation. The use of graphene oxide quantum dots in nucleation, Graphene quantum dots and h-BN are used as nucleating agents to increase the size of monolayer MoS_2 and the repeatability of experiments. The monolayer MoS_2 was characterized by scanning electron microscopy (SEM) PL spectra and Raman spectra. Different color rhombohedral MoS_2 films were also found during the growth, and purple rhombohedral MoS_2 wafers were found to have good luminescence intensity by various characterization tests. The luminescence intensity of monolayer MoS_2 prepared by micromechanical stripping method is 8 times that of monolayer MoS_2. The research in this paper will make monolayer MoS_2 widely used in optoelectronic devices.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304

【相似文献】