GaN基MMIC放大器设计

发布时间：2018-04-01 21:10

本文选题：GaN　切入点：HEMT　出处：《西安电子科技大学》2015年硕士论文

【摘要】：微波功率放大器作为微波射频系统的核心部件在空间、雷达、基站等领域中有着十分广泛的应用。然而以Si为代表的第一代半导体材料和以GaAs为代表的第二代半导体材料制作的微波功率器件受到材料本身的限制并不能够满足在这些领域内的应用,作为第三代半导体材料的GaN材料具有宽达约3.4eV的禁带宽度,利用其材料所制作的功率器件具备高击穿电压、高功率输出密度、高频工作、抗辐照等优点,因此GaN材料被认为具有广阔市场应用前景。单片微波集成电路作为一种电路形式具有体积小、质量轻、高可靠性等突出优点,所以单片形式的GaN微波功放集聚了各种优点,在军事以及商业应用上具有广大的潜在市场。本文依托于实验室的工艺条件和技术积累,以GaN MMIC为目标展开了以下几个方面的研究:1.基于西安电子科技大学宽禁带半导体材料与器件重点实验室成熟的AlGaN/GaN HEMT制作技术,开发出与现有的GaN HEMT制作流程相兼容的GaN MMIC放大器制作流程。主要在原有的HEMT制作流程基础之上,穿插了金属-绝缘介质-金属电容、螺旋微带线电感以及CrNi薄膜电阻的制作工序。2.针对实际测试数据建模的需要,提出了适合于实验室工艺条件和高频应用的TRL去嵌入方案,利用HFSS电磁仿真软件设计了TRL去嵌入的结构尺寸,并且绘制了TRL去嵌入的流片版图。3.建立了MMIC电路设计中需要使用到的无源器件(MIM电容、螺旋电感、NiCr薄膜电阻)的等效电路伸缩模型,使得MMIC电路设计更加准确与快速。4.采用实验室流片成功并完成大信号建模的栅宽为1.25mm,栅长为0.5μm的AlGaN/GaN HEMT器件设计完成了一款F类高效率的MMIC功率放大器。最终联合电磁仿真结果显示,整体电路在器件漏压28V,栅压为-2.2V下,输出功率达到5.2W,增益10dB以上,功率附加效率50%以上,其中频率范围在5.3GHz到5.5GHz。
[Abstract]:Microwave power amplifier as the core component of microwave RF system in space, radar, However, the first generation semiconductor material represented by Si and the second generation semiconductor material, represented by GaAs, are limited by the material itself. Applications in these areas, As the third generation semiconductor material, GaN material has the width of bandgap of about 3.4eV. The power device made of the material has the advantages of high breakdown voltage, high power output density, high frequency operation, radiation resistance and so on. Monolithic microwave integrated circuit (MMIC), as a kind of circuit form, has many outstanding advantages such as small size, light weight, high reliability and so on, so monolithic GaN microwave power amplifier has a variety of advantages. There is a vast potential market for military and commercial applications. This paper relies on the technological conditions and accumulation of technology in the laboratory. Aiming at GaN MMIC, the following aspects are studied: 1. Based on the mature AlGaN/GaN HEMT fabrication technology in the key laboratory of wide band gap semiconductor materials and devices, Xi'an University of Electronic Science and Technology, The fabrication process of GaN MMIC amplifier compatible with the existing GaN HEMT manufacturing process is developed. Based on the original HEMT manufacturing process, the metal-insulating dielectric-metal capacitance is inserted. The manufacturing procedure of spiral microstrip line inductor and CrNi film resistor. 2. According to the need of modeling actual test data, a scheme of TRL de-embedding suitable for laboratory process and high frequency application is proposed. The structure size of TRL de-embedding is designed by using HFSS electromagnetic simulation software, and the flow sheet layout of TRL de-embedding is plotted. 3. The passive device capacitors used in MMIC circuit design are established. The equivalent circuit expansion model of the helical inductor NiCr film resistor, The MMIC circuit design is more accurate and fast .4.The AlGaN/GaN HEMT device with 1.25mm gate width and 0.5 渭 m gate length has been successfully used to model the large signal by using the lab chip. A class F high efficiency MMIC power amplifier has been designed. Finally, a high efficiency MMIC power amplifier has been designed. The results of electromagnetic simulation show that. The output power of the whole circuit is 5.2W at the leakage voltage of 28V, the gate voltage is -2.2V, the gain 10dB is more than 50%, and the frequency range is from 5.3GHz to 5.5 GHz.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75

【相似文献】