半导体材料辐射效应的表征与分析

发布时间：2018-04-02 11:39

  本文选题：半导体材料　切入点：辐射效应　出处：《半导体技术》2017年01期

【摘要】：在辐射环境中,电子系统常用的半导体器件及电路会出现不同程度的性能退化,甚至发生失效。其根本原因来源于辐射致组成半导体器件的材料内部缺陷的产生和积累。表征和分析辐射致材料内部缺陷的种类、浓度、分布等信息,是半导体材料辐射效应研究的重要内容。从辐射致缺陷微观形貌、结构特征,及其引起的宏观电效应三方面,归纳总结了几种重要的半导体材料辐射效应的表征和分析方法,分析了每种方法的优缺点及适用范围,并指出半导体材料辐射效应表征与分析技术发展的方向,可为电子器件、半导体材料辐射效应领域的研究人员提供参考。
[Abstract]:In radiation environments, semiconductor devices and circuits commonly used in electronic systems exhibit varying degrees of performance degradation. The root cause of the failure is the generation and accumulation of internal defects in the materials which are composed of semiconductor devices caused by radiation, and the characterization and analysis of the types, concentrations and distributions of internal defects caused by radiation. It is an important content in the study of radiation effect of semiconductor materials. In this paper, several important methods of characterization and analysis of radiation effects of semiconductor materials are summarized from three aspects: microscopic morphology, structural characteristics and macroscopic electric effects of radiation induced defects. The advantages and disadvantages of each method and its application scope are analyzed, and the development direction of radiation effect characterization and analysis technology of semiconductor materials is pointed out, which can be used as a reference for researchers in the field of electronic devices and semiconductor material radiation effects.
【作者单位】： 中国工程物理研究院核物理与化学研究所;
【基金】：中国工程物理研究院核物理与化学研究所科技创新基金资助项目(2015CX03)
【分类号】：TN304
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本文编号：1700264