CMOS光电耦合集成电路的设计与实现

发布时间：2018-04-04 16:38

本文选题：光电耦合器　切入点：跨阻放大器　出处：《电子科技大学》2015年硕士论文

【摘要】：光电耦合器是市场上常见的一种电子器件,其应用范围非常广泛,光电耦合作为光电子领域的一个研究热点不断取得技术上的进步,光电耦合器的产品线也随着市场的不断拓展而变得越来越丰富。硅基集成光电耦合器具有集成度高、成本低、便于封装等特点,是光电耦合器设计领域的一个重要分支。硅基单片集成光电耦合器的设计难点在于工艺限制了光电探测器的设计灵活度,光生电流以“慢电流”为主,这就限制了光电探测器的速度。光电探测器采用插指型结构的设计在一定程度上提高了光生“快载流子”所占的比重,提高了探测器的响应速度。由于光电探测器的寄生电容很大,而跨阻放大器的探测器直接连接,所以电路设计中面临的主要问题是如何提高跨阻放大器的带宽以提高整个芯片的速度。为了便于测试,本文特别设计了测试模块,用于检测测试过程中可能遇到的问题。光电耦合器的主要指标包括功耗、延迟时间、传输速率等,提高光电探测器性能需要分别从光探测器和信号处理电路两方面考虑。本文根据具体应用需求,设计一款基于标准CMOS工艺的光电耦合器。整个设计工作分为两个部分:光探测器的设计、电路部分的设计。论文首先介绍了光探测器国内外的发展现状,然后介绍了光电耦合器的基本工作原理,随后完成了光探测器及各电路模块的设计工作并最终完成版图设计。文章的最后对芯片进行了测试,测试结果显示,芯片满足设计指标,圆满完成设计任务。
[Abstract]:Photocoupler is a common electronic device in the market. Its application is very extensive. As a hot spot in the field of optoelectronics, optoelectronic coupling has made continuous progress in technology.The product line of photocoupler also becomes more and more rich with the development of market.Silicon based integrated photocoupler is an important branch in the field of optocoupler design because of its high integration, low cost and easy packaging.The design difficulty of silicon-based monolithic integrated photocoupler is that the design flexibility of photodetector is limited by technology, and the photogenerated current is mainly "slow current", which limits the speed of photodetector.The design of optoelectronic detector with inserted structure increases the proportion of photogenerated "fast carrier" to a certain extent, and improves the response speed of the detector.Because the parasitic capacitance of photodetector is very large and the detector of transresistance amplifier is connected directly, the main problem in circuit design is how to increase the bandwidth of transresistance amplifier to increase the speed of the whole chip.In order to facilitate the test, this paper specially designed the test module to detect the problems that may be encountered in the process of testing.The main parameters of photocoupler include power consumption, delay time, transmission rate and so on. To improve the performance of photodetector, we need to consider two aspects: photodetector and signal processing circuit.In this paper, we design a photoelectric coupler based on standard CMOS process.The whole design work is divided into two parts: the design of the photodetector and the design of the circuit.This paper first introduces the development of photodetectors at home and abroad, then introduces the basic working principle of photocoupler, and then completes the design of photodetector and each circuit module, and finally completes the layout design.Finally, the chip is tested. The test results show that the chip meets the design target and completes the design task successfully.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN622

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