可防误翻转高精度欠压锁存电路设计

发布时间：2018-04-05 04:00

  本文选题：欠压锁存　切入点：防误翻转　出处：《中南大学学报(自然科学版)》2017年09期

【摘要】：在分析传统欠压锁存电路(UVLO:Under voltage lockout)工作原理的基础上,利用VIS 0.4μm BCD工艺设计一种具有防误翻转功能的高精度欠压锁存电路。该电路由3部分组成,以带隙比较器为核心,引入具有迟滞特性的防误翻转电路以保证欠压锁存信号能安全可靠地输出,并通过调整带隙基准的温度特性保证欠压锁存阈值精度,最后经过放大输出电路放大后,输出稳定的欠压锁存信号。采用Cadence软件对所设计的电路进行仿真。研究结果表明:在-40~125℃范围内欠压锁存阈值偏差最大为100 m V,阈值分辨率可达10-5 V,在3~5 V工作电压下,防误翻转电路开启阈值为2.95 V,能有效防止欠压锁存电路误翻转。该电路的设计理念和仿真结果有助于后期电源芯片的开发。
[Abstract]:Based on the analysis of the working principle of the traditional UVLOO: under voltage lockout circuit, a high precision UVLOO: under voltage lockout circuit is designed by using the VIS 0.4 渭 m BCD process.The circuit is composed of three parts, with the band gap comparator as the core, the anti-error flip circuit with hysteresis characteristics is introduced to ensure the safe and reliable output of the under-voltage latch signal.By adjusting the temperature characteristics of the bandgap reference, the accuracy of the under-voltage latch threshold is ensured, and a stable under-voltage latch signal is output after the amplification of the output circuit.The designed circuit is simulated by Cadence software.The results show that the maximum threshold deviation of under-voltage latch is 100 MV and the threshold resolution can reach 10-5 V in the range of -40 鈩，

本文编号：1713077