大功率IPM驱动保护芯片设计

发布时间：2018-04-10 10:58

本文选题：IPM + IGBT　；参考：《西安理工大学》2017年硕士论文

【摘要】：作为电力电子行业的核心处理单元,功率器件在国民经济和生活中扮演着至关重要的角色。在当今多种功率器件当中,由于IGBT (Insulated Gate Bipolar Transistor)所具有的性能优势,其应用几乎涵盖了从几十瓦到几兆瓦的功率范围,成为当今电力电子技术应用的核心器件。IPM (Intelligent Power Module)作为IGBT进一步发展的产物,将驱动保护电路与IGBT芯片等进行了集成,减小了体积、重量以及寄生参数的影响,提高了集成度和可靠性,是未来电力电子功率器件的重要发展方向。本文在详细分析IGBT工作过程的基础上,针对IPM中IGBT驱动保护电路的特点,设计了大功率IPM驱动保护集成电路,主要包括驱动模块,保护模块以及辅助功能模块。驱动模块内针对IGBT的开关过程的特点,设计了三种驱动方式,可通过端口灵活配置;保护模块内包含了 VCE退饱和检测,基于寄生电感LeE的di/dt检测,以及针对IPM模块特点的分流器检测方式,在检测到故障发生后对IGBT实施软关断。为了保证驱动保护电路的正常运行,本文还设计了辅助功能模块,辅助功能模块内包含了LDO,振荡器等电路。驱动保护集成电路既可适用于大功率IPM模块也可适用于一般IGBT模块。该驱动保护电路基于CSMC 0.25μm BCD工艺设计,经过Candence spectre软件仿真验证,显示该驱动保护电路具有良好的驱动功能及可靠的保护效果。
[Abstract]:As the core processing unit of power electronics industry, power devices play an important role in national economy and daily life.In today's power devices, due to the performance advantages of IGBT Insulated Gate Bipolar Transistor, its applications almost cover the power range from tens of watts to several megawatts.As the product of the further development of IGBT, the driver protection circuit is integrated with the IGBT chip, which reduces the influence of volume, weight and parasitic parameters.Improving the integration and reliability is an important development direction of power electronic power devices in the future.Based on the detailed analysis of the working process of IGBT and the characteristics of the IGBT driver and protection circuit in IPM, this paper designs a high-power IPM driver protection IC, which mainly includes the driver module, the protection module and the auxiliary function module.According to the characteristics of IGBT switch process, three driving modes are designed in the driver module, which can be configured flexibly through ports. The protection module includes VCE desaturation detection and di/dt detection based on parasitic inductor LeE.According to the characteristics of IPM module, the shunt detection method is used to turn off the IGBT after the fault is detected.In order to ensure the normal operation of the driver protection circuit, the auxiliary function module is designed, which includes LDO, oscillator and so on.The drive protection integrated circuit can be used not only in high power IPM module but also in general IGBT module.The driver protection circuit is based on CSMC 0.25 渭 m BCD process design. The simulation of Candence spectre software shows that the driver protection circuit has good driving function and reliable protection effect.
【学位授予单位】：西安理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN322.8

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