铟锌共掺及掺氟氧化亚铜的制备与性能的研究

发布时间：2018-04-10 15:30

  本文选题：Cu_2O薄膜 + 直流反应磁控溅射　； 参考：《深圳大学》2017年硕士论文

【摘要】：Cu_2O是一种应用前景广泛的直接带隙半导体材料。它的光学带隙约为2.1eV,具有储量广、无毒性、长期稳定等特点,适合应用于太阳能电池、光催化等领域。本征Cu_2O为p型导电的半导体,如何制备n型Cu_2O、改变光学带宽、实现pn同质结以及提高光电转换效率成为人们研究Cu_2O的重点。本文的内容是制备并掺杂Cu_2O薄膜,研究薄膜的光电性能。本文通过反应直流磁控溅射方法制备纯相Cu_2O薄膜并掺入Zn和In两种元素,以及利用热扩散法对Cu_2O薄膜进行F掺杂。研究未掺杂的Cu_2O、Zn和In共掺杂的Cu_2O,以及F掺杂的Cu_2O的光电特性。具体的工作有如下几方面:首先,本文探究了制备纯相Cu_2O的条件。通过调控衬底温度、溅射压强、溅射功率及O2与Ar流量比制备纯相Cu_2O薄膜,实验发现在衬底温度为400℃、溅射压强为2.0Pa、O2与Ar流量比为1:12、Cu靶溅射电压为350V,电流为40mA时可以生成结晶较好,生长颗粒明显的纯相Cu_2O的薄膜。其次,在能生成单相Cu_2O的条件基础上,本文制备了In、Zn共掺杂的Cu_2O薄膜并研究了其光电性能。固定Cu靶溅射电压,适当增加铟锌合金靶溅射电压,可得到掺杂的纯相Cu_2O薄膜。但合金靶电压不能高于320V,否则会产生其他杂质相。制备的In和Zn共掺杂Cu_2O薄膜在500nm以上具有较高的透射率,样品带隙约为2.5eV,与未掺杂Cu_2O的光学带隙相比,In和Zn共掺杂后的薄膜光学带隙有较大的改变。当合金靶电压为310V时制备出的In和Zn掺杂的纯相Cu_2O薄膜样品的导电类型由p型转变为n型。对样品进行XPS测试表明样品含有铜、氧、铟及锌,且铜以Cu1+存在,铟以In3+存在,锌以Zn2+存在,这表明掺入的铟和锌替代了铜的位置,两种元素成功掺入Cu_2O薄膜中。最后,本文利用热扩散法制备了F掺杂Cu_2O薄膜并研究了其光电特性。发现当扩散温度介于850℃~1000℃、扩散时间为30min、CuF2质量为100mg、Ar流量为100sccm以及扩散压强为400Pa时,可以制备出结晶良好的F掺杂Cu_2O薄膜。经EDS测试,所有样品中都含有F元素,表明F原子成功掺杂进入Cu_2O薄膜。通过霍尔效应测试发现所有热扩散掺杂F的样品都为p型导电。在扩散温度为850℃、扩散时间30min、扩散剂质量为100mg、扩散Ar流量为100sccm、扩散压强为400Pa的条件下制备出了最小电阻率为50×cm薄膜样品,这比较适合太阳能电池的应用。
[Abstract]:Cu_2O is a kind of direct band gap semiconductor material with wide application prospect.Its optical band gap is about 2.1 EV, which has the characteristics of wide storage, non-toxicity, long-term stability, etc. It is suitable for application in solar cells, photocatalysis and other fields.As the intrinsic Cu_2O is a p-type conductive semiconductor, how to prepare n-type CuS _ 2O, change the optical bandwidth, realize the pn homogenous junction and improve the photoelectric conversion efficiency has become the focus of the study of Cu_2O.The content of this paper is to prepare and doped Cu_2O thin films, and study the photoelectric properties of the films.In this paper, pure phase Cu_2O thin films were prepared by reactive DC magnetron sputtering and doped with Zn and in elements, and F-doped Cu_2O thin films were prepared by thermal diffusion method.The optical and electrical properties of undoped Cu _ 2O _ 2 Zn and in co-doped Cu _ s _ 2O _ 2 and F-doped Cu_2O were investigated.The main work is as follows: firstly, the preparation conditions of pure phase Cu_2O are investigated.Pure phase Cu_2O thin films were prepared by adjusting substrate temperature, sputtering pressure, sputtering power and the flow ratio of O2 to ar. It was found that the substrate temperature was 400 鈩，

本文编号：1731795