基于CMOS工艺的带隙基准源设计

发布时间：2018-04-12 11:25

本文选题：带隙基准源 + CMOS　；参考：《黑龙江大学》2015年硕士论文

【摘要】：基准源电路能够为系统提供几乎不受电源电压、所用工艺参数及温度影响的直流电压或电流,它被广泛应用于模拟、数字、数模混合集成电路系统中。带隙基准源对电源电压要求不高,具有良好的温度特性、非常小的静态工作电流,可以满足一般集成电路的特性要求,也经常被用于低功耗的电路系统中。本文基于SMIC 0.5μm CMOS工艺设计了一个带隙基准电压源电路,它由开启电路、偏置电路、放大电路及基准电压产生电路四部分构成。论文利用Cadence Spectre进行仿真和验证,并对仿真结果进行分析。仿真结果表明:带隙基准电压源在-50℃—100℃范围内的温度系数为8.11ppm/℃—56.08ppm/℃,电源电压处于1.9V—5V这个电压范围时,基准源的各项性能参数均达到预期要求。最后完成了带隙基准源版图绘制,并进行了DRC、LVS检测,版图面积为7557μm2。
[Abstract]:The circuit can provide almost no power supply system, DC voltage or current with the effects of process parameters and temperature, it is widely used in analog, digital and mixed signal integrated circuit system. The bandgap reference to the supply voltage requirements is not high, with good temperature characteristics, the quiescent current is small, can meet the requirements of the general characteristics of integrated circuits, are also often used in the circuit system of low power consumption. The SMIC 0.5 m CMOS process based on the design of a bandgap voltage reference circuit, which is composed of open circuit, bias circuit, amplifier circuit and a reference voltage generating circuit using the four parts. Cadence Spectre simulation and verification, and analyze the simulation results. The simulation results show that the temperature coefficient of bandgap voltage reference in -50 C and 100 C in the range of 8.11ppm/ DEG 56.08ppm/ DEG C, power supply When the voltage is in the range of 1.9V 5V, all the performance parameters of the reference source meet the expected requirements. Finally, the layout of the bandgap reference source is completed, and DRC and LVS are detected. The layout area is 7557 m2..

【学位授予单位】：黑龙江大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN432

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