基于电压对电流变化率的IGBT结温变化机理及监测方法

发布时间：2018-04-12 13:49

本文选题：绝缘栅双极型晶体管 + 电压对电流变化率　；参考：《高电压技术》2017年01期

【摘要】：为了有效监测IGBT的工作结温,通过机理分析提出了一种基于电压对电流变化率的结温在线监测方法。首先基于半导体物理论述了IGBT饱和压降UCE与电流ICE的关系,得到了UCE、ICE与结温的对应关系,然后分析了结温对d UCE/d ICE的影响机理,进一步得到d UCE/d ICE随结温的变化规律,且所得规律不受电压、电流绝对值以及负载的影响。实验结果表明:在IGBT饱和工作区内随着结温的升高,d UCE/d ICE呈正比例增大,d UCE/d ICE与结温之间表现出良好的线性唯一对应关系,UCE在电流不变的条件下与结温也呈线性关系,并进一步得到了完整的UCE、ICE与结温的3维关系曲线,验证了机理分析。因此可通过监测d UCE/d ICE的值来有效表征IGBT的实时结温,该方法不受负载影响,更易实现。
[Abstract]:In order to effectively monitor the working junction temperature of IGBT, an on-line monitoring method of junction temperature based on the rate of change of voltage to current is proposed through mechanism analysis.The relationship between IGBT saturation voltage drop UCE and current ICE is discussed based on semiconductor physics, and the corresponding relationship between ICE and junction temperature is obtained. Then, the influence mechanism of closing temperature on d UCE/d ICE is analyzed, and the variation law of d UCE/d ICE with junction temperature is obtained.And the law is not affected by voltage, current absolute value and load.The experimental results show that there is a good linear and unique correspondence relationship between d UCE/d ICE and junction temperature in the IGBT saturation working region with the increasing of junction temperature, and there is a linear relationship between d UCE/d ICE and junction temperature under the condition of constant current.Furthermore, the complete 3D relationship curve between UCE-ICE and junction temperature is obtained, and the mechanism analysis is verified.Therefore, the real time junction temperature of IGBT can be effectively represented by monitoring the value of d UCE/d ICE. This method is easy to implement because it is not affected by load.
【作者单位】：海军工程大学舰船综合电力技术国防科技重点实验室;
【基金】：国家自然科学基金重大项目(51490681);国家自然科学基金(51507185) 国家重点基础研究发展计划(973计划)(2015CB251004)~~
【分类号】：TN322.8

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