F类Doherty功率放大器及毫米波天线研究

发布时间：2018-04-13 01:20

本文选题：F类 + Doherty功放　；参考：《杭州电子科技大学》2017年硕士论文

【摘要】：功率放大器广泛应用于移动无线通信、航天军事、雷达卫星等领域,在通信基站中发挥着尤为重要的作用。功放的工作效率提升将有助于降低散热成本,正是这种应用需求很大程度上推动了对更高效率的功率放大器的研究进展。本文正是基于成熟的Doherty技术,结合最新的高效F类功放技术进行了F类Doherty功率放大器的设计。同时为迎合未来5 G通信高频段、大带宽、高速率传输的需求,本文还仿真设计了一款LTCC毫米波微带阵列天线。论文首先进行了大量文献资料的查阅,对于近些年国内外F类以及Doherty功率放大器取得的成果和最新发展动态进行总结归纳,同时也对近几年国内外毫米波微带阵列天线的研究动态和发展前景进行了整理和简单介绍。其次介绍了F类功率放大器的基础理论,详细阐述了平坦化电压和电流波形的数学推导,对两种比较常用的谐波网络设计方式进行了简单介绍和对比分析,同时对Doherty功放的相关理论和工作状态也进行了较为详细的介绍,为后面功率放大器设计方案的选取提供了理论支持。然后仿真设计并制作了工作于1.7~1.9GHz的F类Doherty功率放大电路。采用了Cree半导体公司的GaN晶体管CGH 40010F,主功放工作在F类,辅功放工作在C类,采用两路对称结构。最终的测试结果表明,1.7~1.9GHz频带饱和输出功率不小于43dBm,漏极平均效率高于70%,同时回退后的效率也在50%以上,相对传统Doherty功放的效率有很大提升。毫米波微带天线是未来5G天线的发展趋势。查阅了相关的资料,简单介绍了微带天线的工作原理及其特性参数、分析方法、馈电方式。然后仿真设计了60GHz的毫米波微带阵列天线,设计了一款4×4天线阵,选用缝隙耦合馈电技术进行单元设计,采用LTCC工艺封装。使用HFSS对天线阵进行了仿真,仿真结果表明在58~62GHz范围内,反射系数S11-15dB,平均增益G_a13dBi。
[Abstract]:Power amplifiers are widely used in mobile wireless communications, aerospace military, radar satellites and other fields, which play a particularly important role in communication base stations.The improvement of the efficiency of power amplifier will help to reduce the cost of heat dissipation. It is the demand of this kind of application that promotes the research progress of more efficient power amplifier to a great extent.In this paper, based on the mature Doherty technology and the latest F class power amplifier technology, the design of F class Doherty power amplifier is carried out.In order to meet the demand of high frequency band, large bandwidth and high rate transmission in 5G communication in the future, a LTCC millimeter wave microstrip array antenna is designed and simulated in this paper.Firstly, a lot of literature is consulted, and the achievements and latest developments of class F and Doherty power amplifiers at home and abroad in recent years are summarized and summarized.At the same time, the research trends and development prospects of millimeter wave microstrip array antennas at home and abroad in recent years are summarized and briefly introduced.Secondly, the basic theory of class F power amplifier is introduced, and the mathematical derivation of flattened voltage and current waveforms is described in detail. Two common harmonic network design methods are briefly introduced and compared.At the same time, the related theory and working state of Doherty power amplifier are introduced in detail, which provides theoretical support for the selection of the design scheme of the power amplifier.Then the F class Doherty power amplifier circuit working in 1.7~1.9GHz is designed and fabricated.The GaN transistor CGH 40010F of Cree Semiconductor Company is adopted. The main power amplifier works in Class F and the auxiliary amplifier works in Class C with a two-way symmetrical structure.The final test results show that the saturation output power of 1.7g 1.9GHz band is not less than 43dBm, the average drain efficiency is more than 70dBm, and the efficiency of returning back is more than 50%, which is greatly improved compared with the traditional Doherty power amplifier.Millimeter wave microstrip antenna is the development trend of 5 G antenna in the future.The working principle, characteristic parameters, analysis method and feed mode of microstrip antenna are briefly introduced.Then the millimeter-wave microstrip array antenna of 60GHz is simulated and a 4 脳 4 antenna array is designed. The slot coupling feed technology is used to design the unit and the LTCC process is used to package the antenna.The antenna array is simulated by HFSS. The simulation results show that in the range of 58~62GHz, the reflection coefficient S11-15dB, the average gain Ga13dBi.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722.75;TN822

【参考文献】