一种快速检测单晶硅亚表面损伤层厚度的方法

发布时间：2018-04-14 08:56

本文选题：摩擦学 + 微观磨损　；参考：《机械工程学报》2016年11期

【摘要】：为了保证单晶硅晶圆在精研与抛光过程中的品质与质量,亟待寻求一种快速、简单、经济的硅材料亚表面损伤程度的检测方法。基于HF溶液对单晶硅损伤层的选择性刻蚀特性,提出一种快速检测单晶硅亚表面损伤层厚度的方法。透射电镜观测结果显示,HF溶液能选择性地刻蚀单晶硅划痕区域的亚表面损伤层,证实了该方法检测结果的有效性。利用该方法研究了载荷和速度对单晶硅亚表面划痕损伤的影响。结果表明,当外加载荷为单晶硅临界屈服载荷的1.1倍及以下时,单晶硅亚表面的划痕损伤层厚度随刻画速度的增大而减小;而当外加载荷达到临界屈服载荷的12.5倍时,单晶硅亚表面的划痕损伤对刻画速度的变化不敏感。该方法可方便快捷地检测单晶硅划痕区域亚表面的损伤层厚度,有望应用于单晶硅晶圆平坦化过程的损伤检测与控制。
[Abstract]:In order to ensure the quality and quality of monocrystalline silicon wafer in the process of finishing and polishing, it is urgent to seek a rapid, simple and economical method to detect the degree of subsurface damage of silicon material.Based on the selective etching characteristics of monocrystalline silicon damage layer in HF solution, a rapid method for measuring the thickness of single crystal silicon subsurface damage layer is proposed.Transmission electron microscopy (TEM) results show that the HF solution can selectively etch the subsurface damage layer in the scratch region of monocrystalline silicon, which proves the effectiveness of the method.The effects of load and velocity on the scratch damage of single crystal silicon subsurface were studied by using this method.The results show that when the applied load is 1.1 times of the critical yield load of monocrystalline silicon, the thickness of the scratch damage layer decreases with the increase of the depiction velocity, and when the applied load reaches 12.5 times of the critical yield load,The scratch damage on the subsurface of monocrystalline silicon is insensitive to the variation of the characterization speed.This method can be used to detect the thickness of the damage layer in the scratch area of monocrystalline silicon. It is expected to be applied to the damage detection and control of wafer flattening process of monocrystalline silicon.
【作者单位】：西南交通大学牵引动力国家重点实验室;
【基金】：国家自然科学基金资助项目(91323302,51375409)
【分类号】：TN304.12

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