金属与半导体肖特基接触势垒模型及其载流子传输机制的研究进展

发布时间：2018-04-16 00:41

本文选题：肖特基结 + 势垒模型　；参考：《材料导报》2017年03期

【摘要】：肖特基结具有整流特性,在整流器和光电检测等电子元器件制造中有极其重要的应用,重点介绍了相关研究人员在金属与半导体肖特基接触势垒的形成机理、相关数学模型及其影响因素等方面的研究进展。有研究表明,肖特基势垒的形成主要是由于费米能级的钉扎,而费米能级钉扎则源于界面新相的形成或界面极化键的存在。同时,在肖特基势垒的相关模型中,热电子激发模型是目前应用最为广泛的、用于解释界面载流子传输机制的肖特基接触势垒模型。随着对接触界面载流子传输机制的深入研究,热发射-扩散、热场发射等载流子传输机制模型相继被研究者提出。另外,相关研究表明,快速退火处理可导致肖特基接触界面处的原子扩散、重排、新相生成等现象,对肖特基接触的稳定性产生重要影响。
[Abstract]:Schottky junction has the characteristics of rectifier and has very important applications in the manufacture of electronic components such as rectifier and photoelectric detection. The formation mechanism of Schottky contact barrier between metal and semiconductor is introduced in this paper.Research progress in related mathematical models and their influencing factors.Some studies have shown that Schottky barrier is mainly due to the pinning of Fermi level, and Fermi level pinning is due to the formation of new phase at the interface or the existence of the interfacial polarization bond.At the same time, among the Schottky barrier models, the hot electron excitation model is the most widely used Schottky contact barrier model to explain the transport mechanism of carriers at the interface.With the in-depth study of the carrier transport mechanism of the contact interface, the models of heat emission-diffusion and thermal field emission have been proposed by researchers one after another.In addition, it is shown that rapid annealing can lead to atomic diffusion, rearrangement and new phase formation at Schottky contact interface, which has an important effect on the stability of Schottky contact.
【作者单位】：陕西理工大学材料科学与工程学院;陕西理工大学电气工程学院;
【分类号】：TN311.7

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