基于RSD开关的集成模块初探

发布时间：2018-04-16 07:16

本文选题：RSD + 脉冲功率　；参考：《华中科技大学》2015年硕士论文

【摘要】：脉冲功率技术是将功率在时间上进行压缩的一种功率变换技术,以高功率、大电流、高电压和短脉宽为特点。随着现代工业上的发展,脉冲功率技术尤其是重复频率技术在工业上的应用越来越多,半导体功率开关逐渐取代传统开关应用在脉冲功率技术中。半导体功率集成可实现功率系统的高功率密度、高效率、高可靠性以及低成本,是脉冲功率技术发展的重要方向。RSD(Reversely Switched Dynistor)是一种新型高速大功率半导体开关器件,该器件采用控制等离子体层触发的开通模式。器件开通后通流面积损失小,故其不仅有高di/dt耐量,也可在短时间内开通大电流,均压问题小,可以方便串联。相对于传统的晶闸管类器件,RSD器件更适合在脉冲功率技术领域内应用。本文首先以RSD器件为开关的脉冲电路为基础,将电路集成起来构成一个模块。建立起模块的三维立体模型,通过有限元软件计算出其内部杂散电感值,对模块内部各个器件的电感分布进行了分析和研究。将模块计算出的杂散参数导入到电路模型中,通过电路仿真软件分析了模块内部电路参数对于输出电流di/dt量的影响。本文还进行了实验研究,根据建立的三维模型制作了相同结构的模块并进行放电实验,实验达到了仿真预期的效果。实验获得了在1500V下8.85kA/μs的电流上升率,脉宽1μs。研究结果为以后的更高层次的集成提供了参考依据。
[Abstract]:Pulse power technology is a kind of power conversion technology which compresses power in time. It is characterized by high power, high current, high voltage and short pulse width.With the development of modern industry, pulse power technology, especially repetition rate technology, is applied more and more in industry. Semiconductor power switch is gradually replacing traditional switch in pulse power technology.Semiconductor power integration can realize the high power density, high efficiency, high reliability and low cost of power system. It is an important direction of pulse power technology development. RSDN Reversely Switched Dynistor is a new type of high speed and high power semiconductor switch device.The device uses a turn-on mode that controls the plasma layer trigger.Due to the small current loss after the device is turned on, it not only has high di/dt tolerance, but also can turn on large current in a short time, and the voltage equalization problem is small, so it can be conveniently connected in series.Compared with conventional thyristor devices, RSDs are more suitable for application in pulse power technology.Firstly, based on the pulse circuit of RSD switch, the circuit is integrated into a module.The three-dimensional model of the module is established, and the internal stray inductance is calculated by the finite element software. The inductance distribution of each device in the module is analyzed and studied.The stray parameters calculated by the module are imported into the circuit model, and the influence of the internal circuit parameters on the output current di/dt quantity is analyzed by the circuit simulation software.According to the established 3D model, the same structure module is made and the discharge experiment is carried out, and the simulation results are achieved.The current rise rate and pulse width of 8.85kA/ 渭 s at 1500 V were obtained.The results provide a reference for higher level integration in the future.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN303

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